期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic ApplicationsV.?D. Kravtsova; M.?B. Umerzakova; N.?E. Korobova; D.?V. Vertyanov20182018, vol.47, no.7
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous AddersA. A. Starykh; A. V. Kovalev20182018, vol.47, no.7
Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure LayersE. N. Vigdorovich20182018, vol.47, no.7
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar TransistorsM. O. Hrapov; A. V. Gluhov; V. A. Gridchin; S. V. Kalinin20182018, vol.47, no.7
Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic CircuitsD. A. Bulakh; G. G. Kazennov; A. V. Lapin20182018, vol.47, no.7
Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched CapacitorsYu. Yu. Razuvaev20182018, vol.47, no.7
TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor StructuresK. O. Petrosyants; D. A. Popov; D. V. Bykov20182018, vol.47, no.7
Calculation of the Influence of Shunt Parameters on thedV/dtEffect in Power PhotothyristorsD. S. Silkin; V. P. Paderov20182018, vol.47, no.7
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure EffectV. A. Sergeev; A. M. Hodakov20182018, vol.47, no.7
Design Automation Technique of Silicon Bandgap Voltage ReferenceV. G. Ivanov; V. V. Losev20182018, vol.47, no.7
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