期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

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2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer TechnologyHiroshi Maejima; Kazushige Kanda; Susumu Fujimura; Teruo Takagiwa; Susumu Ozawa; Jumpei Sato; Yoshihiko Shindo; Manabu Sato; Naoaki Kanagawa; Junji Musha; Satoshi Inoue; Katsuaki Sakurai; Naohito Morozumi; Ryo Fukuda; Toshifumi Hashimoto; Xu Li20182018, vol.118, no.10
3D-TLC NAND型フラッシュメモリにおける水平エラー検出と垂直LDPC符号を用いた高信頼化手法鈴木峻; 出口慶明; 中村俊貴; 溝口恭史; 竹内健20182018, vol.118, no.10
〔招待講演〕メモリズムプロセッサによる人工知能の課題解決井上克己; 範公可20182018, vol.118, no.10
A new core transistor equipped with NVM functionality without using any emerging memory materialsY. Taniguchi; S. Yoshida; F. Owada; Y. Shinagawa; H. Kasai; Lin-Jia-You; Wei-I-Hsuan; D. Okada; K. Nagasawa; K. Okuyama20182018, vol.118, no.10
［依頼講演］IoT向け65nmSOTBプロセスを用いた2RWデュアルポートSRAMの設計事例澤田陽平; 山本芳樹; 長谷川拓実; 新川田裕樹; 藪内誠; 篠崎義弘; 伊東恭二; 田中信二; 新居浩二; 蒲原史郎20182018, vol.118, no.10
同／異RowでのWLパルスタイミング調整を用いた同期型2RW 8T Dual-port SRAMのダイナミック電力削減横山佳巧; 石井雄一郎; 奥田治之; 新居浩二20182018, vol.118, no.10
［招待講演］情報セキュリティのためのランダム回路篠原尋史20182018, vol.118, no.10
［招待講演］結晶性酸化物半導体FETを用いたメモリLSI小山潤; 関貴子; 八窪裕人; 大下智; 古谷一馬; 石津貴彦; 熱海知昭; 安藤善範; 松林大介; 加藤清; 奥田高; 藤田昌宏; 山崎舜平20182018, vol.118, no.10
メモリベースド·リコンフィギャラブルロジックデバイスの検討と開発大原衛; 佐藤正幸; 岡部忠; 勝満徳20182018, vol.118, no.10
ヘテロジニアスストレージにおけるアプリケーションに応じた不揮発性メモリ構成の最適化松井千尋; 竹内健20182018, vol.118, no.10



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