期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

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2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid CoatingKaname Imokawa; Nozomu Tanaka; Akira Suwa; Daisuke Nakamura; Taizoh Sadoh; Tetsuya Goto; Hiroshi Ikenoue20182018, vol.118, no.241
Thin film formation of ferroelectric undoped HfO_2 on Si(100) by RF magnetron sputteringMin Gee Kim; Rengie Mark D. Mailig; Shun-ichiro Ohmi20182018, vol.118, no.241
Schottky Barrier Height Reduction of Pd_2Si/Si(100) Diodes by Dopant Segregation ProcessRengie Mark D. MAILIG; Min Gee KIM; Shun-ichiro OHMI20182018, vol.118, no.241
[招待講演]次世代車載マイコン対応Fin-FET MONOS津田是文; 斉藤朋也; 長瀬寛和; 川嶋祥之; 吉冨敦司; 岡西忍; 林倫弘; 丸山卓也; 井上真雄; 村中誠志; 加藤茂樹; 萩原琢也; 齊藤博和; 山口直; 門島勝; 丸山隆弘; 三原竜善; 柳田博史; 園田賢一郎; 山口泰男; 山下朋弘20182018, vol.118, no.241
Si(100)表面原子レベル平坦化プロセスを用いたHf系MONOS型不揮発性メモリ作製プロセスに関する検討工藤聡也; 堀内勇介; 大見俊一郎20182018, vol.118, no.241
[招待講演]低抵抗アモルファス相と高抵抗結晶相を有するCr_2Ge_2Te_6を用いた相変化メモリ畑山祥吾; 須藤祐司; 安藤大輔; 小池淳一20182018, vol.118, no.241
[招待講演]ソニーセミコンダクタマニュファクチャリンダ熊本テクノロジーセンターでの熊本震災からの教訓鈐木裕巳; 上田康弘20182018, vol.118, no.241
窒素添加LaB_6界面制御層によるペンタセン/SiO_2界面特性向上に関する検討前田康貴; 朴鏡恩; 小松勇貴; 大見俊一郎20182018, vol.118, no.241
ラマン分光法による熱電デバイス応用へ向けたSiナノワイヤのプロセス評価横川凌; 富田基裕; 渡邉孝信; 小椋厚志20182018, vol.118, no.241
ソースとドレインが非対称のMOSFETを用いた電気的特性ばらつきの統計的解析市野真也; 寺本章伸; 黒田理人; 間脇武蔵; 諏訪智之; 須川成利20182018, vol.118, no.241
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