期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
Recent Progress towards realizing GaN/AlGaN Quantum Cascade LasersKe Wang; Li Wang; Lin Tsung Tse; Hideki Hirayama20182018, vol.118, no.331
GaN-MOSFETにおけるGaN表面処理とゲート絶縁膜アニールによるチャネル移動度の改善梶原瑛祐; 新留彩; 彦坂年輝; 蔵口雅彦; 吉岡啓; 布上真也20182018, vol.118, no.331
GaN/AlN極薄膜量子井戸の作製と偏光特性船戸充; 市川修平; 川上養一20182018, vol.118, no.331
n-GaNショットキー接触の電圧印加界面顕微光応答測定塩島謙次; 前田昌嵩; 三島友義20182018, vol.118, no.331
ナノインプリントによるモスアイ構造作製法に関する評価実験平賀健太; 久保田繁; 鹿又健作; 有馬ボシールアハンマド; 廣瀬文彦20182018, vol.118, no.331
ALD法を用いたフレキシブルフィルム上へのゼオライト薄膜の試作とイオン吸着特性評価森義晴; 野口雄祐; 鹿又健作; 三浦正範; 有馬ボシールアハンマド; 久保田繁; 廣瀬文彦20182018, vol.118, no.331
ALD-Al_2O_3/AlGaN/GaN MIS-HEMTの電気特性に及ぼすアニール雰囲気の効果古岡啓太; 久保俊晴; 三好実人; 江川孝志20182018, vol.118, no.331
化学溶液析出法による無添加及びLi添加CuO薄膜の成長と構造及び電気的特性岡田英之; 寺迫智昭; 五丁健治; 林本直也20182018, vol.118, no.331
化学溶液析出法によるGZOシード層上へのZnOナノロッドの成長とPEDOT:PSS/ZnOナノロッドヘテロ接合の形成小原翔平; 寺迫智昭; 難波優; 橋国直人; 矢木正和; 野本淳一; 山本哲也20182018, vol.118, no.331
c面GAN上へのエピタキシャルAlInN膜の成長ならびにその混晶組成と微細構造の関係山中瑞樹; 三好実人; 江川孝志; 竹内哲也20182018, vol.118, no.331
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