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期刊
刊名
Advanced Electronic Materials
参考译名
先进电子材料
收藏年代
2019～2025
全部
2019
2020
2021
2022
2023
2024
2025
2019, vol.5, no.1
2019, vol.5, no.10
2019, vol.5, no.11
2019, vol.5, no.12
2019, vol.5, no.2
2019, vol.5, no.3
2019, vol.5, no.4
2019, vol.5, no.5
2019, vol.5, no.6
2019, vol.5, no.7
2019, vol.5, no.8
2019, vol.5, no.9
题名
作者
出版年
年卷期
All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage
Wang Zhenwei; Alshammari Fwzah H.; Omran Hesham; Hota Mrinal K.; Al‐Jawhari Hala A.; Salama Khaled N.; Alshareef Husam N.
2019
2019, vol.5, no.12
Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi
2
2 Te
2.7
2.7 Se
0.3
0.3 /Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect
Qiao Shuang; Chen Mingjing; Wang Yu; Liu Jihong; Lu Junfeng; Li Fangtao; Fu Guangsheng; Wang Shufang; Ren Kailiang; Pan Caofeng
2019
2019, vol.5, no.12
A Fully Printed Flexible MoS
2
2 Memristive Artificial Synapse with Femtojoule Switching Energy
Feng Xuewei; Li Yida; Wang Lin; Chen Shuai; Yu Zhi Gen; Tan Wee Chong; Macadam Nasiruddin; Hu Guohua; Huang Li; Chen Li; Gong Xiao; Chi Dongzhi; Hasan Tawfique; Thean Aaron Voon‐Yew; Zhang Yong‐Wei; Ang Kah‐Wee
2019
2019, vol.5, no.12
On the Origin of the Large Remanent Polarization in La:HfO
2
2
Schenk Tony; Fancher Chris M.; Park Min Hyuk; Richter Claudia; Künneth Christopher; Kersch Alfred; Jones Jacob L.; Mikolajick Thomas; Schroeder Uwe
2019
2019, vol.5, no.12
A Multilayer‐Graphene/Silicon Infrared Schottky Photo‐Diode
Apicella Valerio; Fasasi Teslim Ayinde; Wang Shu; Lei Sipeng; Ruotolo Antonio
2019
2019, vol.5, no.12
Electrical Properties of Solvated Tectomers: Toward Zettascale Computing
Chiolerio Alessandro; Draper Thomas C.; Jost Carsten; Adamatzky Andrew
2019
2019, vol.5, no.12
Ballistic Quantum Transport of Sub‐10 nm 2D Sb
2
2 Te
2
2 Se Transistors
Qu Hengze; Zhou Wenhan; Guo Shiying; Li Zhi; Wang Yangyang; Zhang Shengli
2019
2019, vol.5, no.12
Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs
Lahr Oliver; Vogt Sofie; Wenckstern Holger; Grundmann Marius
2019
2019, vol.5, no.12
Spin‐Momentum Locking in the Gate Tunable Topological Insulator BiSbTeSe
2
2 in Non‐Local Transport Measurements
Voerman Joris A.; Li Chuan; Huang Yingkai; Brinkman Alexander
2019
2019, vol.5, no.12
Application of Perovskite‐Structured Materials in Field‐Effect Transistors
Wu Tingjun; Rashid Mohd Yusoff Abd; Gao Peng; Pisula Wojciech
2019
2019, vol.5, no.12
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