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期刊
ISSN
0129-1564
刊名
International Journal of High Speed Electronics and Systems
参考译名
国际高速电子学与系统杂志
收藏年代
2000~2023
全部
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2023
2019, vol.28, no.1/2
2019, vol.28, no.3/4
题名
作者
出版年
年卷期
Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics
Zane Jamal-Eddine; Yuewei Zhang; Siddharth Rajan
2019
2019, vol.28, no.1/2
β-(Al,Ga)2O3 for High Power Applications — A Review on Material Growth and Device Fabrication
Ashley (Zhe) Jian; Kamruzzaman Khan; Elaheh Ahmadi
2019
2019, vol.28, no.1/2
Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices
M. A. Mastro; J. K. Hite; C. R. Eddy; M. J. Tadjer; S. J. Pearton; F. Ren; J. Kim
2019
2019, vol.28, no.1/2
Preface
Uttam Singisetti; Towhidur Razzak; Yuewei Zhang
2019
2019, vol.28, no.1/2
Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics
Md Nazmul Hasan; Edward Swinnich; Jung-Hun Seo
2019
2019, vol.28, no.1/2
On the Progress Made in GaN Vertical Device Technology
Dong Ji; Srabanti Chowdhury
2019
2019, vol.28, no.1/2
Substrate Effects in GaN-on-Silicon RF Device Technology
Hareesh Chandrasekar
2019
2019, vol.28, no.1/2
Ultra-Wide Bandgap AlxGa1-xN Channel Transistors
Towhidur Razzak; Siddharth Rajan; Andrew Armstrong
2019
2019, vol.28, no.1/2
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
Stefan Degroote; Marianne Germain; Filip Gucmann; Callum Middleton; James W. Pomeroy; Martin Kuball; Riad Kabouche; Romain Pecheux; Kathia Harrouche; Etienne Okada; Farid Medjdoub; Joff Derluyn
2019
2019, vol.28, no.1/2
Application of Atom Probe Tomography for Advancing GaN Based Technology
Olivia G. Licata; Baishakhi Mazumder
2019
2019, vol.28, no.1/2
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