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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
收藏年代
2000~2024
全部
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2019, vol.119, no.10
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2019, vol.119, no.96
题名
作者
出版年
年卷期
HfSiO_x/GaN(0001)の化学構造および電子状態分析
大田晃生; 牧原克典; 生田目俊秀; 塩﨑宏司; 宮﨑誠一
2019
2019, vol.119, no.96
ホウ素導入を行ったALD-Al_2O_3/GaN-MOSキャパシタにおける界面特性評価
出来真斗; 奥出真; 安藤悠人; 渡邉浩崇; 田中敦之; 久志本真希; 新田州吾; 本田善央; 天野浩
2019
2019, vol.119, no.96
超格子GeTe/Sb_2Te_3メモリの第一原理計算による構造変化シミュレーション
小川湧太郎; 野原弘晶; 白川裕規; 洗平昌晃; 白石賢二
2019
2019, vol.119, no.96
X線によるナノデバイスおよび格子欠陥の3次元観察: シリコン材料·デバイス研究会
表和彦; 伊藤義泰
2019
2019, vol.119, no.96
[依頼講演]光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測
筒井一生; 松下智裕; 名取鼓太郎; 小川達博; 室隆桂之; 森川良忠; 星井拓也; 角嶋邦之; 若林整; 林好一; 松井文彦; 木下豊彦
2019
2019, vol.119, no.96
電子デバイスから見た2D/3Dナノ計測の必要性
臼田宏冶
2019
2019, vol.119, no.96
イオン注入法によるIV族半導体混晶薄膜の歪緩和促進機構について
祖父江秀隆; 福田雅大; 柴山茂久; 財満鎭明; 中塚理
2019
2019, vol.119, no.96
熱処理によるAl/Ge(111)上の極薄Ge層形成
小林征登; 大田晃生; 黒澤昌志; 洗平昌晃; 田岡紀之; 池田弥央; 牧原克典; 宮崎誠一
2019
2019, vol.119, no.96
NO窒化処理を施したSiO_2/SiC界面近傍の窒素分布評価
細井卓治; Kidist Moges; 染谷満; 志村考功; 原田信介; 渡部平司
2019
2019, vol.119, no.96
Ultra-low resistance contact for n-type Ge_(1-x)Sn_x with in-situ Sb heavily doping and nickel stanogermanide formation
Jihee Jeon; Akihiro Suzuki; Shigehisa Shibayama; Shigeaki Zaima; Osamu Nakatsuka
2019
2019, vol.119, no.96
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