期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2019, vol.119, no.10 2019, vol.119, no.102 2019, vol.119, no.114 2019, vol.119, no.115 2019, vol.119, no.12 2019, vol.119, no.127
2019, vol.119, no.128 2019, vol.119, no.129 2019, vol.119, no.130 2019, vol.119, no.131 2019, vol.119, no.132 2019, vol.119, no.134
2019, vol.119, no.14 2019, vol.119, no.140 2019, vol.119, no.149 2019, vol.119, no.150 2019, vol.119, no.151 2019, vol.119, no.152
2019, vol.119, no.153 2019, vol.119, no.154 2019, vol.119, no.161 2019, vol.119, no.162 2019, vol.119, no.163 2019, vol.119, no.164
2019, vol.119, no.165 2019, vol.119, no.167 2019, vol.119, no.169 2019, vol.119, no.170 2019, vol.119, no.171 2019, vol.119, no.172
2019, vol.119, no.173 2019, vol.119, no.179 2019, vol.119, no.181 2019, vol.119, no.184 2019, vol.119, no.19 2019, vol.119, no.198
2019, vol.119, no.199 2019, vol.119, no.204 2019, vol.119, no.209 2019, vol.119, no.211 2019, vol.119, no.213 2019, vol.119, no.215
2019, vol.119, no.219 2019, vol.119, no.23 2019, vol.119, no.230 2019, vol.119, no.231 2019, vol.119, no.234 2019, vol.119, no.237
2019, vol.119, no.238 2019, vol.119, no.239 2019, vol.119, no.24 2019, vol.119, no.240 2019, vol.119, no.242 2019, vol.119, no.243
2019, vol.119, no.248 2019, vol.119, no.25 2019, vol.119, no.251 2019, vol.119, no.252 2019, vol.119, no.253 2019, vol.119, no.254
2019, vol.119, no.257 2019, vol.119, no.261 2019, vol.119, no.269 2019, vol.119, no.271 2019, vol.119, no.273 2019, vol.119, no.277
2019, vol.119, no.279 2019, vol.119, no.280 2019, vol.119, no.282 2019, vol.119, no.284 2019, vol.119, no.292 2019, vol.119, no.294
2019, vol.119, no.3 2019, vol.119, no.303 2019, vol.119, no.304 2019, vol.119, no.306 2019, vol.119, no.308 2019, vol.119, no.310
2019, vol.119, no.312 2019, vol.119, no.313 2019, vol.119, no.315 2019, vol.119, no.322 2019, vol.119, no.332 2019, vol.119, no.334
2019, vol.119, no.335 2019, vol.119, no.337 2019, vol.119, no.339 2019, vol.119, no.346 2019, vol.119, no.348 2019, vol.119, no.349
2019, vol.119, no.35 2019, vol.119, no.352 2019, vol.119, no.356 2019, vol.119, no.36 2019, vol.119, no.369 2019, vol.119, no.37
2019, vol.119, no.370 2019, vol.119, no.371 2019, vol.119, no.374 2019, vol.119, no.375 2019, vol.119, no.376 2019, vol.119, no.38
2019, vol.119, no.381 2019, vol.119, no.39 2019, vol.119, no.394 2019, vol.119, no.397 2019, vol.119, no.40 2019, vol.119, no.400
2019, vol.119, no.404 2019, vol.119, no.407 2019, vol.119, no.409 2019, vol.119, no.41 2019, vol.119, no.410 2019, vol.119, no.411
2019, vol.119, no.412 2019, vol.119, no.414 2019, vol.119, no.42 2019, vol.119, no.421 2019, vol.119, no.423 2019, vol.119, no.427
2019, vol.119, no.430 2019, vol.119, no.431 2019, vol.119, no.439 2019, vol.119, no.443 2019, vol.119, no.447 2019, vol.119, no.45
2019, vol.119, no.454 2019, vol.119, no.458 2019, vol.119, no.459 2019, vol.119, no.46 2019, vol.119, no.466 2019, vol.119, no.47
2019, vol.119, no.471 2019, vol.119, no.472 2019, vol.119, no.473 2019, vol.119, no.474 2019, vol.119, no.478 2019, vol.119, no.484
2019, vol.119, no.54 2019, vol.119, no.63 2019, vol.119, no.71 2019, vol.119, no.78 2019, vol.119, no.82 2019, vol.119, no.84
2019, vol.119, no.86 2019, vol.119, no.87 2019, vol.119, no.96

题名作者出版年年卷期
HfSiO_x/GaN(0001)の化学構造および電子状態分析大田晃生; 牧原克典; 生田目俊秀; 塩﨑宏司; 宮﨑誠一20192019, vol.119, no.96
ホウ素導入を行ったALD-Al_2O_3/GaN-MOSキャパシタにおける界面特性評価出来真斗; 奥出真; 安藤悠人; 渡邉浩崇; 田中敦之; 久志本真希; 新田州吾; 本田善央; 天野浩20192019, vol.119, no.96
超格子GeTe/Sb_2Te_3メモリの第一原理計算による構造変化シミュレーション小川湧太郎; 野原弘晶; 白川裕規; 洗平昌晃; 白石賢二20192019, vol.119, no.96
X線によるナノデバイスおよび格子欠陥の3次元観察: シリコン材料·デバイス研究会表和彦; 伊藤義泰20192019, vol.119, no.96
[依頼講演]光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測筒井一生; 松下智裕; 名取鼓太郎; 小川達博; 室隆桂之; 森川良忠; 星井拓也; 角嶋邦之; 若林整; 林好一; 松井文彦; 木下豊彦20192019, vol.119, no.96
電子デバイスから見た2D/3Dナノ計測の必要性臼田宏冶20192019, vol.119, no.96
イオン注入法によるIV族半導体混晶薄膜の歪緩和促進機構について祖父江秀隆; 福田雅大; 柴山茂久; 財満鎭明; 中塚理20192019, vol.119, no.96
熱処理によるAl/Ge(111)上の極薄Ge層形成小林征登; 大田晃生; 黒澤昌志; 洗平昌晃; 田岡紀之; 池田弥央; 牧原克典; 宮崎誠一20192019, vol.119, no.96
NO窒化処理を施したSiO_2/SiC界面近傍の窒素分布評価細井卓治; Kidist Moges; 染谷満; 志村考功; 原田信介; 渡部平司20192019, vol.119, no.96
Ultra-low resistance contact for n-type Ge_(1-x)Sn_x with in-situ Sb heavily doping and nickel stanogermanide formationJihee Jeon; Akihiro Suzuki; Shigehisa Shibayama; Shigeaki Zaima; Osamu Nakatsuka20192019, vol.119, no.96
12345678910...