期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
The investigation of interface property of N-doped LaB_6/SiO_2/Si(100) stack structure by increasing deposition temperatureKyung Eun PARK; Hideki KAMATA; Shun-ichiro OHMI20192019, vol.119, no.239
Investigation of ferroelectric undoped HfO_2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory applicationMin Gee KIM; Masakazu KATAOKA; Masaki HAYASHI; Rengie Mark D. MAILIG; Shun-ichiro OHMI20192019, vol.119, no.239
A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layerJooyoung PYO; Yusuke HORIUCHI; Shun-ichiro OHMI20192019, vol.119, no.239
[招待講演]NiAl as Cu alternative for ultrasmall feature sizesLinghan Chen; Junichi Koike; Daisuke Ando; Yuji Sutou20192019, vol.119, no.239
Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applicationsRengie Mark D. MAILIG; Yuichiro ARUGA; Min Gee KIM; Shun-ichiro OHMI20192019, vol.119, no.239
[招待講演]プラズマを用いた原子層エッチング(ALE)熊倉翔; 木原嘉英; 本田昌伸20192019, vol.119, no.239
Hf界面層を用いた強誘電性ノンドープHfO_2薄膜の Si(100)基板上への直接形成片岡正和; 林将生; Min Gee Kim; 大見俊一郎20192019, vol.119, no.239
多層電荷蓄積層を用いたHf系MONOS型不揮発性多値メモリに関する検討堀内勇介; 表柱栄; 大見俊一郎20192019, vol.119, no.239
[依頼講演]Co/Si界面の酸化物層がショットキー障壁高さと接触抵抗に及ぼす影響城戸光一; 佐藤謙; 黒田理人; 安藤大輔; 須藤祐司; 小池淳一20192019, vol.119, no.239
[招待講演]ナノ人工物メトリクスを実現するランダムナノ構造形成と電気的読出技術葛西誠也; 呂任鵬; 清水克真; 殷翔; 上羽陽介; 石川幹雄; 北村満; 法元盛久; 成瀬誠; 松本勉20192019, vol.119, no.239
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