期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
Understanding the interface in 2D layered transistorsKosuke NAGASHIO20192019, vol.119, no.273
[招待講演] 2019 SISPADレビュー鎌倉良成20192019, vol.119, no.273
[招待講演] 強誘電体HfO_2トンネル接合メモリのスケーラビリティに関する検討小林正治; 莫非; 多川友作; 更屋拓哉; 平本俊郎20192019, vol.119, no.273
ビーム実験による原子スケールプロセスにおける表面反応解析唐橋一浩; 伊藤智子; 浜口智志20192019, vol.119, no.273
招待講演:産業応用を目指したコンパクトモデルの開発三浦道子20192019, vol.119, no.273
3Dフラッシュメモリの製造技術を用いた積層型論理回路の設計法: 全加算器の設計法、低消費電力設計法鈴木章矢; 渡辺重佳20192019, vol.119, no.273
[招待講演] 強誘電体電界効果トランジスタの動的挙動のデバイスシミュレーション服部淳一; 池上努; 福田浩一; 太田裕之; 右田真司; 浅井栄大20192019, vol.119, no.273
[招待講演]不純物の離散性に伴った半導体デバイスモデリングの基本的側面II: 半導体ナノ構造におけるランダム不純物佐野伸行20192019, vol.119, no.273
シリコン材料·デバイス研究会(SDM): [招待講演]SiC酸化プロセスの第一原理分子動力学解析大野隆央20192019, vol.119, no.273
[招待講演]トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション渡辺正裕; 執行直之; 星井拓也; 古川和由; 角嶋邦之; 佐藤克己; 末代知子; 更屋拓哉; 高倉俊彦; 伊藤一夫; 福井宗利; 鈴木慎一; 竹内潔; 宗田伊里也; 若林整; 中島昭; 西澤伸一; 筒井一生; 平本俊郎; 大橋弘通; 岩井洋20192019, vol.119, no.273
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