期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

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题名作者出版年年卷期
SiO_2/GaN MOS構造における電極形成後アニール前後の界面及び膜中電荷の評価古川暢昭; 上沼睦典; 石河泰明; 浦岡行治20192019, vol.119, no.356
ミストCVD法によるGa-Sn-O薄膜を用いたメモリスタ開発小林雅樹; 杉崎澄生; 木村睦20192019, vol.119, no.356
Al_2O_3絶縁膜上に作製したGa-Sn-0 TFT服部一輝; 谷野健太; 松田時宜; 川原村敏幸; 劉麗; 木村睦20192019, vol.119, no.356
量子デバイスに向けた球殼状タンパク質をテンプレートとしたCuInS_2ナノ粒子作製唐木裕馬; 宮永良子; 岡本尚文; 石河泰明; 山下一郎; 浦岡行治20192019, vol.119, no.356
薄膜デバイスを用いた人工網膜の生体外実験豊田航平; 冨岡圭佑; 三澤慶悟; 内藤直矢; 木村睦20192019, vol.119, no.356
ニューラルネットワークのための多層クロスポイント型シナプス素子津野拓海; 近藤厚志; 新村純平; 田中遼; 山川大樹; 柴山友輝; 岩城江津子; 木村睦20192019, vol.119, no.356
2段階堆積プロセスを用いた(Bi, La)_4Ti_3O_(12)薄膜の結晶成長吉田誉; 石崎勇真; 宮部雄太; 木村睦20192019, vol.119, no.356
Ga-Sn-O薄膜を用いた抵抗変化型メモリのメモリスタ特性の電極依存性橋本快人; 倉崎彩太; 田中遼; 杉崎澄生; 角田涼; 木村睦20192019, vol.119, no.356



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