期刊


ISSN8756-6990
刊名Optoelectronics, Instrumentation and Data Processing
参考译名光电子学、仪表与数据处理
收藏年代2000～2023



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2020, vol.56, no.1 2020, vol.56, no.2 2020, vol.56, no.3 2020, vol.56, no.4 2020, vol.56, no.5 2020, vol.56, no.6

题名作者出版年年卷期
Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial LayersEmel'yanov, E. A.; Petrushkov, M. O.; Putyato, M. A.; Loshkarev, I. D.; Vasev, A. V.; Semyagin, B. R.; Preobrazhenskii, V. V.20202020, vol.56, no.5
Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al2O3 Grown by Atomic Layer DepositionSidorov, G. Yu; Sidorov, Yu G.; Sabinina, I., V; Varavin, V. S.; Gorshkov, D., V20202020, vol.56, no.5
Quantum Information Processing on the Basis of Single Ultracold Atoms in Optical TrapsRyabtsev, I. I.; Mityanin, K. Yu; Beterov, I. I.; Tretyakov, D. B.; Entin, V. M.; Yakshina, E. A.; Al'yanova, N., V; Neizvestnii, I. G.20202020, vol.56, no.5
From Self-Organization of Monoatomic Steps on the Silicon Surface to Subnanometer MetrologySheglov, D., V; Sitnikov, S., V; Fedina, L., I; Rogilo, D., I; Latyshev, A., V; Kozhukhov, A. S.20202020, vol.56, no.5
Etching Kinetics of Si(111) Surface by Selenium Molecular BeamPonomarev, S. A.; Rogilo, D., I; Petrov, A. S.; Sheglov, D., V; Latyshev, A., V20202020, vol.56, no.5
Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface PassivationMalin, T., V; Milakhin, D. S.; Mansurov, V. G.; Kozhukhov, A. S.; Protasov, D. Yu; Loshkarev, I. D.; Zhuravlev, K. S.20202020, vol.56, no.5
Subminiature Light Sources Based on Semiconductor NanostructuresGaisler, V. A.; Gaisler, A., V; Dmitriev, D., V; Toropov, A., I; Kachanova, M. M.; Zhivodkov, Yu A.; Kozhuhov, A. S.; Scheglov, D., V; Latyshev, A., V; Derebezov, I. A.20202020, vol.56, no.5
New Type of Heterostructures for Powerful pHEMT TransistorsZhuravlev, K. S.; Protasov, D. Yu; Bakarov, A. K.; Toropov, A., I; Gulyaev, D., V; Lapin, V. G.; Lukashin, V. M.; Pashkovskii, A. B.20202020, vol.56, no.5
Plasmon-Enhanced Vibrational Spectroscopy of Semiconductors NanocrystalsMilekhin, A. G.; Duda, T. A.; Rodyakina, E. E.; Anikin, K., V; Kuznetsov, S. A.; Milekhin, I. A.; Zahn, D. R. T.; Latyshev, A., V20202020, vol.56, no.5
Transport Properties of Two-Dimensional Topological Insulators and Excitonic CondensatesBoev, M., V; Braginskii, L. S.; Kovalev, V. M.; Magarill, L., I; Mahmoodian, M. M.; Entin, M., V20202020, vol.56, no.5
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