期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2022, vol.51, no.1 2022, vol.51, no.2 2022, vol.51, no.3 2022, vol.51, no.4 2022, vol.51, no.5 2022, vol.51, no.6
2022, vol.51, no.7 2022, vol.51, no.8

题名作者出版年年卷期
Technology and Thermomechanics in Growing Tubular Silicon Single CrystalsVerezub N. A.; Kozhitov L. V.; Kondratenko T. T.; Prostomolotov A. I.; Silaev I. V.20222022, vol.51, no.8
Protein Folding Quantum Circuit for Bio Material Modelling CompressionLisnichenko M. O.; Protasov S. I.20222022, vol.51, no.8
Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling ToolsPetrosyants K. O.; Silkin D. S.; Popov D. A.20222022, vol.51, no.8
Accounting for the Porosity of the Material in the Simulation of the Time-Dependent Dielectric Breakdown in the Metallization System of Integrated CircuitsGanykina E. A.; Rezvanov A. A.; Orlov A. A.20222022, vol.51, no.8
Failure-Tolerant Synchronous and Self-Timed Circuits ComparisonZatsarinny A. A.; Stepchenkov Yu. A.; Diachenko Yu. G.; Rogdestvenski Yu. V.20222022, vol.51, no.8
The Mechanism of a Film-Forming Medium during the RF Deposition of Ferroelectric Ceramics of the BaxSr1–xTiO3 CompositionAfanasiev M. S.20222022, vol.51, no.8
Practice of the Visual Determination of the Direction of the Rotation of the Light Polarization Plane in Gyrotropic Uniaxial Single CrystalsZabelina E. V.; Kozlova N. S.; Svistkova I. I.20222022, vol.51, no.8
Temperature Studies of Hall Field Sensors Based on Nanosized Silicon-on-Insulator HeterostructuresAbgaryan K. K.; Leonov A. V.; Reviznikov D. L.20222022, vol.51, no.8
Accounting for Heat Release in Small Volumes of Matter on the Example of the Growth of ZnO Microrods: Search for a Modeling TechniqueMatyushkin I. V.; Telminov O. A.; Mikhaylov A. N.20222022, vol.51, no.8
Effect of Treatment in Nitrogen Plasma on the Electrical Parameters of AlGaN/GaN HeterostructuresEnisherlova K. L.; Seidman L. A.; Bogolyubova S. Yu.20222022, vol.51, no.8
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