期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

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2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2022, vol.51, no.1 2022, vol.51, no.2 2022, vol.51, no.3 2022, vol.51, no.4 2022, vol.51, no.5 2022, vol.51, no.6
2022, vol.51, no.7 2022, vol.51, no.8

题名作者出版年年卷期
Finite Element Modeling of Surface Acoustic Wave Devices Using COMSOLKoigerov A. S.; Korlyakov A. V.20222022, vol.51, no.4
Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with ArgonMurin D. B.; Pivovarenok S. A.; Kozin A. S.20222022, vol.51, no.4
Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar MixtureEfremov A. M.; Betelin V. B.; Kwon K.-H.20222022, vol.51, no.4
A Mechanism for the Formation of a Conducting Medium in Memristers Based on Electroformed Open Sandwich MDM StructuresMordvintsev V. M.; Gorlachev E. S.; Kudryavtsev S. E.20222022, vol.51, no.4
Application of the Methods Used to Interpret the Electron Spectroscopy Spectra to Interpret Ion Spectroscopy SignalsAfanasiev V. P.; Lobanova L. G.20222022, vol.51, no.4
Modeling Silicon Cylindrical CMOS Nanotransistors with a Fully Enclosed Variable-Radius GateMasalsky N. V.20222022, vol.51, no.4
Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K DielectricsGaidukasov R. A.; Myakon’kikh A. V.; Rudenko K. V.20222022, vol.51, no.4
Formation of Nanosized Structures on the Silicon Surface by a Combination of Focused Ion Beam Methods and Plasma-Chemical EtchingKlimin V. S.; Morozova Yu. V.; Kots I. N.; Vakulov Z. E.; Ageev O. A.20222022, vol.51, no.4
Analysis of the Effects Influencing the Retention Time of Filament-Based MemristorsRudenko K. V.; Fadeev A. V.20222022, vol.51, no.4



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