期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2023, vol.52, no.1 2023, vol.52, no.2 2023, vol.52, no.3 2023, vol.52, no.4

题名作者出版年年卷期
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer DepositionFadeev A. V.; Myakon’kikh A. V.; Smirnova E. A.; Simakin S. G.; Rudenko K. V.20232023, vol.52, no.4
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV RadiationEvstafieva M. V.; Knyazev M. A.; Korepanov V. I.; Red’kin A. N.; Roschupkin D. V.; Yakimov E. E.20232023, vol.52, no.4
Optoelectronic Properties of Benzimidazobenzophenanthroline Thin FilmDyari Mustafa Mamand; Hiwa Mohammad Qadr20232023, vol.52, no.4
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate DielectricMasalskii N. V.20232023, vol.52, no.4
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial FilmsTulina N. A.; Rossolenko A. N.; Borisenko I. Y.; Ivanov A. A.20232023, vol.52, no.4
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 MixturesEfremov A. M.; Bobylev A. V.; Kwon K.-H.20232023, vol.52, no.4
Tomography of Detectors Taking Dead Time into AccountBogdanov Yu. I.; Katamadze K. G.; Borshchevskaya N. A.; Avosopiants G. V.; Bogdanova N. A.; Kulik S. P.; Lukichev V. F.20232023, vol.52, no.4
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room TemperatureSaenko A. V.; Vakulov Z. E.; Klimin V. S.; Bilyk G. E.; Malyukov S. P.20232023, vol.52, no.4
Polymer Liners with Cu-MWCNT based HCTSVs to Reduce Crosstalk EffectsKatepogu Rajkumar; G. Umamaheswara Reddy20232023, vol.52, no.4
Influence of Structural Defects on the Electrophysical Parameters of pin-PhotodiodesKoval’chuk N. S.; Lastovskii S. B.; Odzhaev V. B.; Petlitskii A. N.; Prosolovich V. S.; Shestovsky D. V.; Yavid V. Yu.; Yankovskii Yu. N.20232023, vol.52, no.4
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