期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2023, vol.52, no.1 2023, vol.52, no.2 2023, vol.52, no.3 2023, vol.52, no.4 2023, vol.52, no.5 2023, vol.52, no.6
2023, vol.52, no.7

题名作者出版年年卷期
Neuromorphic Systems: Devices, Architecture, and AlgorithmsFetisenkova K. A.; Rogozhin A. E.20232023, vol.52, no.5
Simulation of the Effect of Lattice Defects on the Work of Joined Materials SeparationMakhviladze T. M.; Sarychev M. E.20232023, vol.52, no.5
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane PlasmaEfremov A. M.; Smirnov S. A.; Betelin V. B.20232023, vol.52, no.5
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich StructuresMordvintsev V. M.; Kudryavtsev S. E.; Naumov V. V.; Gorlachev E. S.20232023, vol.52, no.5
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift RegionNovoselov A. S.; Masalskii N. V.20232023, vol.52, no.5
An Overview of the NBTI Phenomenon in MOS DevicesDhiaElhak Messaoud; Djezzar Boualem; Zitouni Abdelkader20232023, vol.52, no.5
Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement TechniqueAbdelmadjid Benabdelmoumene; Djezzar Boualem; Messaoud Dhiaelhak; Boubaaya Mohamed; Chenouf Amel; Zatout Boumediene20232023, vol.52, no.5
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory ElementsProkaznikov A. V.; Paporkov V. A.; Chirikov V. A.; Evseeva N. A.20232023, vol.52, no.5
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal StructureSirotkin V. V.20232023, vol.52, no.5
Electrophysical Parameters and Emission Spectra of the Glow Discharge of DifluorodichloromethaneMurin D. B.; Chesnokov I. A.; Gogulev I. A.; Grishkov A. E.20232023, vol.52, no.5
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