期刊


刊名Advanced Electronic Materials
参考译名先进电子材料
收藏年代2019～2025



全部

2019 2020 2021 2022 2023 2024
2025

2024, vol.10, no.1 2024, vol.10, no.10 2024, vol.10, no.11 2024, vol.10, no.12 2024, vol.10, no.2 2024, vol.10, no.3
2024, vol.10, no.4 2024, vol.10, no.5 2024, vol.10, no.6 2024, vol.10, no.7 2024, vol.10, no.8 2024, vol.10, no.9

题名作者出版年年卷期
Actin Paracrystals Display Double Schottky Diode-Like Electrical BehaviorHoracio F. Cantiello; Brenda C. Gutierrez; Maria del Rocio Cantero20242024, vol.10, no.2
Mechanical Motion Tuned Carrier Transport Characteristic of Dynamic DiodeZunshan Yang; Huikai Zhong; Can Wang; Yanghua Lu; Lixuan Feng; Xutao Yu; Chang Liu; Shisheng Lin20242024, vol.10, no.2
Impact of Ionic Species on the Performance of Pedot:PSS-Based Organic Electrochemical TransistorsRenan Colucci; Bianca de Andrade Feitosa; Gregorio Couto Faria20242024, vol.10, no.2
Flexible, Bending Stable, and Biocompatible Silk Fibroin/NiFe Films for Bio-Integrated Microwave ApplicationsMengmeng Guan; Qi Zhang; Ruibin Qiu; Zhongqiang Hu; Xiaohui Zhang; Bin Peng; Ming Liu20242024, vol.10, no.2
Novel Two-Dimensional NbWO_6 Nanosheets for High Performance UV PhotodetectorsPeilong Song; Yong Zhang; Jinshou Wang; Hui Liu; Li Tian20242024, vol.10, no.2
Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi-Wire ChannelsLukas Wind; Raphael Behrle; Martien I. den Hertog; Corban G. E. Murphey; James F. Cahoon; Masiar Sistani; Walter M. Weber20242024, vol.10, no.2
The Interplay Between Ferroelectricity and Electrochemical Reactivity on the Surface of Binary Ferroelectric Al_xB_(1-x)NYongtao Liu; Anton Ievlev; Joseph Casamento; John Hayden; Susan Trolier-McKinstry; Jon-Paul Maria; Sergei V. Kalinin; Kyle P. Kelley20242024, vol.10, no.2
Cobalt-Based Metallic Glass Microfibers for Flexible Electromagnetic Shielding and Soft Magnetic PropertiesElham Sharifikolouei; Tomasz Koziel; Piotr Bala; Antoni Zywczak; Lukasz Gondek; Reza Rashidi; Michela Fracasso; Roberto Gerbaldo; Gianluca Ghigo; Laura Gozzelino; Daniele Torsello20242024, vol.10, no.2
Temperature Dependence of Low-Frequency Noise Characteristics of NiO_x/β-Ga_2O_3 p-n Heterojunction DiodesSubhajit Ghosh; Dinusha Herath Mudiyanselage; Fariborz Kargar; Yuji Zhao; Houqiang Fu; Alexander A. Balandin20242024, vol.10, no.2
Unveiled Influence of Sub-gap Density of States on Low-Frequency Noise in Si-Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?Wonjun Shin; Ji Ye Lee; Ryun-Han Koo; Jangsaeng Kim; Jong-Ho Lee; Sang Yeol Lee; Sung-Tae Lee20242024, vol.10, no.2
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