期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2024



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023 2024

2024, vol.53, no.2 2024, vol.53, no.4 2024, vol.53, no.5 2024, vol.53, no.6 2024, vol.53, no.7 2024, vol.53, no.8
2024, vol.53, no.Suppl.1

题名作者出版年年卷期
Plasma Parameters and Etching Kinetics of Si/SiO2 in Mixtures of?Fluorocarbon Gases with Argon and Helium 20242024, vol.53, no.6
Gas Phase Composition and Kinetics of Fluorine Atoms in SF6 Plasma 20242024, vol.53, no.6
Tunnel Breakdown Bipolar Transistor 20242024, vol.53, no.6
Modeling the Functional Features of a Memristive Crossbar Array in Neuromorphic Electronic Modules 20242024, vol.53, no.6
Brief Review of Neuron Typology and Analysis of the Use of Memristor Crossbars 20242024, vol.53, no.6
Study of ALD-Deposited TaN Properties 20242024, vol.53, no.6
Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors 20242024, vol.53, no.6
Study of the Conductivity of Carbon Nanotubes Deposited on an Iridium-Silicon Silicide Substrate 20242024, vol.53, no.6
III-nitride HEMT Heterostructures with Ultrathin AlN Barrier: Obtaining and Experimental Application 20242024, vol.53, no.6
Influence of Manufacturing Defects and Electrical Noise on the Evolution of an Optically Controlled Charge Qubit 20242024, vol.53, no.6



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