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会议文集
文集名
High Purity and High Mobility Semiconductors 16
会议名
Symposium "High Purity and High Mobility Semiconductors 16", Held during 239th ECS Meeting with 18th International Meeting on Chemical Sensors (IMCS)
中译名
《第十六届高纯度与高迁移率半导体讨论会》
机构
The Electrochemical Society (ECS)
会议日期
30 May - 3 June 2021
会议地点
Online
出版年
2021
馆藏号
340015
题名
作者
出版年
Formation and Characterization of Pseudomorphic Ge_(1-x-y)Si_xSn_y/Ge Heterojunction Structures for Photovoltaic Application
O. Nakatsuka; S. Asaba; M. Kurosawa; M. Sakashita; N. Taoka; S. Zaima
2021
Application of Machine Learning for High-performance Multicrystalline Materials
Noritaka Usami; Kentaro Kutsukake; Takuto Kojima; Hiroaki Kudo; Tetsuya Matsumoto; Tatsuya Yokoi; Yasuo Shimizu; Yutaka Ohno
2021
Layer transfer technology for multiple channels stacked semiconductor-on-insulator platform (Invited)
W. H. Chang; T. -Z. Hong; P. -J. Sung; T. Irisawa; H. Ishii; Y. -J. Lee; T. Maeda
2021
Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation
I. Mica; P. Monge Roffarello; D. Dutartre; M. Basso; A. Abbadie; J. Frascaroli; M. Tonini; L. Livellara; G. Maria Mari; S. Bertaiola; F. Illuzzi
2021
Applications of the Hakoniwa method to impurity atoms wandering inside Si wafers
E. Kamiyama; K. Sueoka
2021
Defect Engineering for Monolithic Integration of III-V Semiconductors on Silicon Substrates
E. Simoen; P. -C. (Brent) Hsu; K. Takakura; O. Syshchyk; A. Vais; H. Yu; B. Parvais; N. Collaert; C. Claeys
2021
Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer
Keisuke Yamamoto; Dong Wang; Hiroshi Nakashima
2021
Interface Treatment Related Defects during Germanium Gate Stack Formation
D. Misra
2021
Impact of Micro-/Nano-Electronics, Miniaturization Limit, and Technology Development for the Next 10 Years and after
H. Iwai
2021
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