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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
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2001
2002
2003
2004
2005
2006
2007
2003, vol.24, no.1
2003, vol.24, no.10
2003, vol.24, no.11
2003, vol.24, no.12
2003, vol.24, no.2
2003, vol.24, no.3
2003, vol.24, no.4
2003, vol.24, no.5
2003, vol.24, no.6
2003, vol.24, no.7
2003, vol.24, no.8
2003, vol.24, no.9
题名
作者
出版年
年卷期
High Performance 0.14μm Gate-Length AlGaN/GaN Power HEMTs on SiC
G. H. Jessen; R. C. Fitch; J. K. Gillespie; G. D. Via; N. A. Moser; M. J. Yannuzzi; A. Crespo; J. S. Sewell;, R. W. Dettmer; T. J. Jenkins; R. F. Davis; J. Yang, M. Asif Khan; S. C. Binari
2003
2003, vol.24, no.11
Dynamic Current-Voltage Characteristics of III-N HFETs
Koudymov, G. Simin; M. Asif Khan; A. Tarakji, R. Gaska; M. S. Shur
2003
2003, vol.24, no.11
Omnidirectional Reflective Contacts for Light-Emitting Diodes
T. Gessmann; E. F. Schubert; J. W. Graff; K. Streubel; C. Karnutsch
2003
2003, vol.24, no.11
Oxide Reliability of Drain Engineered I/O NMOS From Hot Carrier Injection
Yuhao Luo; Deepak Nayak; Daniel Gitlin; Ming-Yin Hao; Chia-Hung Kao; Chien-Hsun Wang
2003
2003, vol.24, no.11
Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
L.-A. Ragnarsson; N. A. Bojarczuk; J. Karasinski; S. Guha
2003
2003, vol.24, no.11
Successive Breakdown Events and Their Relation With Soft and Hard Breakdown Modes
E. Y. Wu; J. Sune
2003
2003, vol.24, no.11
High Voltage (>1 kV) and High Current Gain (32) 4H-SiC Power BJTs Using Al-Free Ohmic Contact to the Base
Yanbin Luo; Jianhui Zhang; Petre Alexandrov; Leonid Fursin; Jian H. Zhao; Terry Burke
2003
2003, vol.24, no.11
A Metal/Polysilicon Damascene Gate Technology for RF Power LDMOSFETs
James G. Fiorenza; Jorg Scholvin; Jesus A. del Alamo
2003
2003, vol.24, no.11
A Fast Switching Segmented Anode NPN Controlled LIGBT
Shyam Hardikar; R. Tadikonda; M. Sweet; K. Vershinin; E. M. Sankara Narayanan
2003
2003, vol.24, no.11
Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
Xin Yang; Yung C. Liang; Ganesh S. Samudra
2003
2003, vol.24, no.11
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