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期刊
ISSN
0957-4522
刊名
Journal of Materials Science
参考译名
材料科学杂志:电子材料
收藏年代
1999~2013
全部
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2005, vol.16, no.1
2005, vol.16, no.10
2005, vol.16, no.11-12
2005, vol.16, no.2
2005, vol.16, no.3
2005, vol.16, no.4
2005, vol.16, no.5
2005, vol.16, no.6
2005, vol.16, no.7
2005, vol.16, no.8
2005, vol.16, no.9
题名
作者
出版年
年卷期
Study of magnetic properties of thin cobalt films deposited by chemical vapour deposition
N. DEO; M. F. BAIN; J. H. MONTGOMERY; H. S. GAMBLE
2005
2005, vol.16, no.7
Structural and electrical characterization of AgInS{sub}2 thin films grown by single-source thermal evaporation method
Y. AKAKI; S. KURIHARA; M. SHIRAHAMA; K. TSURUGIDA; T. KAKENO; K. YOSHINO
2005
2005, vol.16, no.7
Synthesis and photoluminescence of ZnO nanowires/nanorods
J. GRABOWSKA; K. K. NANDA; E. MCGLYNN; J.-P. MOSNIER; M. O. HENRY; A. BEAUCAMP; A. MEANEY
2005
2005, vol.16, no.7
Structural, optical and electrical characterization on ZnO film grown by a spray pyrolysis method
K. YOSHINO; T. FUKUSHIMA; M. YONETA
2005
2005, vol.16, no.7
GaN reactive ion etching using SiCl{sub}4:Ar:SF{sub}6 chemistry
E. SILLERO; F. CALLE; M. A. SANCHEZ-GARCIA
2005
2005, vol.16, no.7
Growth and characterisation of wide-bandgap, I-VII optoelectronic materials on silicon
L. O'REILLY; G. NATARAJAN; P. J. MCNALLY; D. CAMERON; O. F. LUCAS; M. MARTINEZ-ROSAS; L. BRADLEY; A. READER; S. DANIELS
2005
2005, vol.16, no.7
Fabrication of p-type doped ZnO thin films using pulsed laser deposition
J.-R. DUCLERE; R. O'HAIRE; A. MEANEY; K. JOHNSTON; I. REID; G. TOBIN; J.-P. MOSNIER; M. GUILLOUX-VIRY; E. MCGLYNN; M. O. HENRY
2005
2005, vol.16, no.7
Atomistic structure and strain relaxation in Czochralski-grown Si{sub}xGe{sub}(1-x) bulk alloys
I. YONENAGA; M. SAKURAI; M. H. F. SLUITER; Y. KAWAZOE; S. MUTO
2005
2005, vol.16, no.7
Tungsten work function engineering for dual metal gate nano-CMOS
J. K. EFAVI; T. MOLLENHAUER; T. WAHLBRINK; H. D. B. GOTTLOB; M. C. LEMME; H. KURZ
2005
2005, vol.16, no.7
Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor
B. H. W. TOH; D. W. MCNEILL; H. S. GAMBLE
2005
2005, vol.16, no.7
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