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2011, vol.40, no.7	2011, vol.40, no.8

题名	作者	出版年	年卷期
Interrelation of Equivalent Values for Linear Energy Transfer of Heavy Charged Particles and the Energy of Focused Laser Radiation	A. I. Chumakov	2011	2011, vol.40, no.3
CMOS Logic Elements with Increased Failure Resistance to Single-Event Upsets	S. I. Ol'chev; V. Ya. Stenin	2011	2011, vol.40, no.3
Memory-Cell Layout as a Factor in the Single-Event-Upset Susceptibility of Submicron DICE CMOS SRAM	V. Ya. Stenin; I. G. Cherkasov	2011	2011, vol.40, no.3
Modeling of Recombination in SiO_2 under the Effect of Ionizing Radiation by the Monte Carlo Method	V. A. Polunin; A. V. Sogoyan	2011	2011, vol.40, no.3
Evaluation of Resistance of CMOS LSIC to the Factor of Absorbed Dose under the Pulsed Radiation Effect	A. V. Sogoyan	2011	2011, vol.40, no.3
Features of Charge Formation and Relaxation in SOS Structures under the Effect of Ionizing Radiation	A. V. Sogoyan; G. G. Davydov	2011	2011, vol.40, no.3
Influence of Implantation of Silicon and Oxygen Ions into a Heteroepitaxial Silicon Layer on a Sapphire Substrate on the Leakage Currents of n-Channel Transistors of CMOS IC SOS Technology	A. A. Chistilin; A. A. Romanov; Yu. M. Moskovskaya; A. V. Ulanova	2011	2011, vol.40, no.3
Electrothermal Behavior of the Elements of SOS CMOS Chips	O. A. Gerasimchuk; K. A. Epifantsev; T. V. Pavlova; P. K. Skorobogatov	2011	2011, vol.40, no.3