期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2011, vol.40, no.1 2011, vol.40, no.2 2011, vol.40, no.3 2011, vol.40, no.4 2011, vol.40, no.5 2011, vol.40, no.6
2011, vol.40, no.7 2011, vol.40, no.8

题名作者出版年年卷期
Interrelation of Equivalent Values for Linear Energy Transfer of Heavy Charged Particles and the Energy of Focused Laser RadiationA. I. Chumakov20112011, vol.40, no.3
CMOS Logic Elements with Increased Failure Resistance to Single-Event UpsetsS. I. Ol'chev; V. Ya. Stenin20112011, vol.40, no.3
Memory-Cell Layout as a Factor in the Single-Event-Upset Susceptibility of Submicron DICE CMOS SRAMV. Ya. Stenin; I. G. Cherkasov20112011, vol.40, no.3
Modeling of Recombination in SiO_2 under the Effect of Ionizing Radiation by the Monte Carlo MethodV. A. Polunin; A. V. Sogoyan20112011, vol.40, no.3
Evaluation of Resistance of CMOS LSIC to the Factor of Absorbed Dose under the Pulsed Radiation EffectA. V. Sogoyan20112011, vol.40, no.3
Features of Charge Formation and Relaxation in SOS Structures under the Effect of Ionizing RadiationA. V. Sogoyan; G. G. Davydov20112011, vol.40, no.3
Influence of Implantation of Silicon and Oxygen Ions into a Heteroepitaxial Silicon Layer on a Sapphire Substrate on the Leakage Currents of n-Channel Transistors of CMOS IC SOS TechnologyA. A. Chistilin; A. A. Romanov; Yu. M. Moskovskaya; A. V. Ulanova20112011, vol.40, no.3
Electrothermal Behavior of the Elements of SOS CMOS ChipsO. A. Gerasimchuk; K. A. Epifantsev; T. V. Pavlova; P. K. Skorobogatov20112011, vol.40, no.3