期刊


ISSN1475-7435
刊名International Journal of Nanotechnology
参考译名国际纳米技术杂志
收藏年代2004～2024



全部

2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023 2024

2014, vol.11, no.1/4 2014, vol.11, no.12 2014, vol.11, no.5/8 2014, vol.11, no.9/11

题名作者出版年年卷期
Retention behaviour of graphene oxide resistive switching memoryFang Yuan; Yu-Ren Ye; Chao-Sung Lai; Jer-Chyi Wang; Zhigang Zhang; Liyang Pan; Jun Xu20142014, vol.11, no.1/4
Characteristics of gate-all-around polycrystalline silicon channel SONOS flash memoryJoo Yun Seo; Sang-Ho Lee; Se Hwan Park; Wandong Kim; Do-Bin Kim; Byung-Gook Park20142014, vol.11, no.1/4
Investigation of bipolar resistive switching characteristics in Si_3N_4-based RRAM with metal-insulator-silicon structureSungjun Kim; Sunghun Jung; Byung-Gook Park20142014, vol.11, no.1/4
Characteristics of nitrogen plasma immersion ion implantation treatment on gadolinium oxide resistive switching random access memoryJer-Chyi Wang; Yu-Ren Ye; Ying-Huei Wu; Chi-Fong Ai; Wen-Fa Tsai20142014, vol.11, no.1/4
Negative resistance characterisation and defective trap exploration in ZnO nonvolatile memory devicesFu-Chien Chiu; Chih-Yao Huang; Wen-Yuan Chang; Tung-Ming Pan20142014, vol.11, no.1/4
Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFETChia-Ming Yang; Jer-Chyi Wang; Tzu-Wen Chiang; Yi-Ting Lin; Teng-Wei Juan; Tsung-Cheng Chen; Ming-Yang Shih; Cheng-En Lue; Chao-Sung Lai20142014, vol.11, no.1/4
Superior bipolar resistive switching characteristics of Cu-TiO_2 based RRAM cellsYu-Chih Huang; Huan-Min Lin; Huang-Chung Cheng20142014, vol.11, no.1/4
Analysis of conduction mechanism in silicon nitride-based RRAMSunghun Jung; Sungjun Kim; Jeong-Hoon Oh; Kyung-Chang Ryoo; Jong-Ho Lee; Hyungcheol Shin; Byung-Gook Park20142014, vol.11, no.1/4
Microstructural investigation of through-silicon via fabrication by pulse-reverse electroplating for high density nanoelectronicsNay Lin; Jianmin Miao; Robert Preisser20142014, vol.11, no.1/4
Fabrication, characterisation and modelling of fast flexible semiconductor nanomembrane electronicsGuoxuan Qin; Guoping Tu; Tianhao Cai; Jianguo Ma; Zhenqiang Ma20142014, vol.11, no.1/4
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