期刊


ISSN1475-7435
刊名International Journal of Nanotechnology
参考译名国际纳米技术杂志
收藏年代2004～2024



全部

2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023 2024


题名作者出版年年卷期
Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wellsMazwan, M.; Ng, S. S.; Syamsul, M.; Shuhaimi, A.; Pakhuruddin, M. Z.; Rahim, A. F. A.20242024, vol.21, no.4/5
Effect of post-deposition annealing on CeO 2 passivation layer spin coated on silicon substrate in nitrogen ambienceShekkeer, Kammutty Musliyarakath Abdul; Cheong, Kuan Yew; Quah, Hock Jin20242024, vol.21, no.4/5
Fabrication of ultraviolet photodetector using Au nanoparticles decorated ZnO NRs/GaNAbed, Shireen Mohammed; Mohammad, Sabah M.; Hassan, Zainuriah; Muhammad, A.; Ahmad, M. A.; Syamsul, Mohd20242024, vol.21, no.4/5
Effect of GaN cap layer towards ohmic contact of open-gate Cr AlGaN/GaN high electron mobility transistorFauzi, Najihah; Firdaus, Amirul; Falina, Shaili; Mohammad, Sabah M.; Inaba, Masafumi; Kawarada, Hiroshi; Syamsul, Mohd20242024, vol.21, no.4/5
Energy band gap investigation of Al nanoparticles/polystyrene nanocomposite foilsNaser, H.; Mohammad, S. M.; Shanshool, H. M.; Hassan, Z.; Al-Hazeem, Z.20242024, vol.21, no.4/5
Laser synthesis route for production of GaN nanocrystals for optical sensor protectionBakar, M. A. A.; Mohammad, S. M.; Yinyuan, Z.; Razak, S. N. A.; Abdullah, M.20242024, vol.21, no.4/5
Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devicesIslam, N.; Baharin, M. S. N. S.; Rahim, A. F. A.; Khan, M. F. A. J.; Ghazali, N. A.; Bakar, A. S. A.; Mohamed, M. F. P.20242024, vol.21, no.4/5
Characteristics of InGaN/AlN heterostructure grown by using MOCVD techniqueYusof, Ahmad Sauffi; Hassan, Zainuriah; Ng, Sha Shiong; Ahmad, Mohd Anas; Lim, Way Foong; Hamady, Sidi Ould Saad; Fressengeas, Nicolas20242024, vol.21, no.4/5
Effects of post-deposition annealing in argon-oxygen-argon ambient on physical and electrical characteristics of thulium oxide passivation layer on silicon substrateDeng, Junchen; Quah, Hock Jin20242024, vol.21, no.4/5
The effect of varying oxidising conditions for transformation of metallic cerium to cerium oxide filmsZabidi, A. R. M.; Hassan, Z.; Lim, W. F.20242024, vol.21, no.4/5
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