期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance EffectD. V. Vasil’ev; D. V. Kostyuk; E. P. Orlov; D. A. Zhukov; Yu. V. Kazakov; V. V. Amelichev; P. A. Belyakov20202020, vol.49, no.2
E-Beam Lithography Simulation TechniquesA. E. Rogozhin; F. A. Sidorov20202020, vol.49, no.2
Synthesis of Energy-Efficient Flip-Flop Circuits Based on Sequential-Parallel Structures of MOS TransistorsA. A. Kulakova; E. B. Lukyanenko20202020, vol.49, no.2
Special Aspects of the Kinetics of Reactive Ion Etching of SiO2in Fluorine-, Chlorine-, and Bromine-Containing PlasmaA. M. Efremov; D. B. Murin; V. B. Betelin; K.-H. Kwon20202020, vol.49, no.2
Quantum Chip with the Optimized Tunnel Structure for Measuring a Charge Qubit Based on a Double Quantum DotA. V. Tsukanov; I. Yu. Kateev20202020, vol.49, no.2
Effect of Operating Mode of the Input-Output Ports of Complex Functional Devices on Indicators of the Pulsed Electric Strength of the ProductA. N. Shemonaev; K. A. Epifantsev; P. K. Skorobogatov20202020, vol.49, no.2
Thermoelectric Cooling of Heat-Loaded ElectronicsE. N. Vasil’ev20202020, vol.49, no.2
Investigating the Formation of Defects in Silicon during Gamma IrradiationM. A. Saurov; S. V. Bulyarskiy; A. V. Lakalin20202020, vol.49, no.2



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