期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
The Effect of Temperature on the Development of a Contrast HSQ Electronic ResistA. A. Tatarintsev; A. V. Shishlyannikov; K. V. Rudenko; A. E. Rogozhin; A. E. Ieshkin20202020, vol.49, no.3
Concerning the Effect of Type of Fluorocarbon Gas on the Output Characteristics of the Reactive-Ion Etching ProcessA. M. Efremov; D. B. Murin; K.-H. Kwon20202020, vol.49, no.3
Role of Readsorption in the Formation of Vertical A~(III)B~V Nanowires with Self-Catalytic GrowthA. G. Nastovjak; A. G. Usenkova; N. L. Shwartz; I. G. Neizvestny20202020, vol.49, no.3
Obtaining Electrically Conductive Structures by Electrochemical Deposition of Copper onto Substrates of Anodized Aluminum Using Polyfluorochalcones as a Photoresist LayerS. V. Derevyashkin; E. A. Soboleva; V. V. Shelkovnikov20202020, vol.49, no.3
Features of the Application of Reactive Ion Etching of Quartz in the Production of Pendulums of Q-Flex AccelerometersM. S. Kharlamov; O. S. Guseva; S. F. Konovalov20202020, vol.49, no.3
Nonlocal Electron Dynamics in Donor-Acceptor Doped Transistor HeterostructuresA. B. Pashkovskii; A. S. Bogdanov; V. M. Lukashin; S. I. Novikov20202020, vol.49, no.3
Planar Triode for Vacuum MicroelectronicsS. Sh. Rekhviashvili; D. S. Gaev20202020, vol.49, no.3
Modeling of Single Ionizing Particle Impacts on Logical Elements of a CMOS Triple Majority GateYu. V. Katunin; V. Ya. Stenin; M. Kromin20202020, vol.49, no.3



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