期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
Single-Photon Response and Microdisk Spectroscopy in a Diamond SubstrateM. S. Rogachev; I. Yu. Kateev; A. V. Tsukanov20202020, vol.49, no.4
Plasma Parameters and Kinetics of Active Particles in the Mixture CHF_3+O_2+ArA. M. Efremov; D. B. Murin; K.-H. Kwon20202020, vol.49, no.4
Calculation of the Electrical Conductivity of a Thin Cylindrical Conducting Tube Taking into Account the Anisotropy of the Isoenergetic SurfaceI. A. Kuznetsova; D. N. Romanov20202020, vol.49, no.4
Calculation of Performance of MEMS-Switch with Increased Capacitance RatioI. V. Uvarov; N. V. Marukhin; P. S. Shlepakov; V. F. Lukichev20202020, vol.49, no.4
Modifying the Dielectric Properties of the TlGaS_2 Single Crystal by Electron IrradiationS. M. Asadov; S. N. Mustafaeva; V. F. Lukichev20202020, vol.49, no.4
Influence of Oxygen Pressure on Switching in Memoristors Based on Electromoformed Open Sandwich StructuresV. M. Mordvintsev; E. S. Gorlachev; S. E. Kudryavtsev; V. L. Levin20202020, vol.49, no.4
Determination of Thermoelectric Cooling Modes of Heat-Loaded ElectronicsE. N. Vasil'ev20202020, vol.49, no.4
High-Voltage LDMOS Transistors on an SOI Structure for Electronics That Operate in Extreme ConditionsS. I. Babkin; S. I. Volkov; A. A. Glushko; S. A. Morozov; A. S. Novoselov; A. A. Stolyarov20202020, vol.49, no.4
Physical Parameters of the Broadband Noise-Generator DiodesV. V. Buslyuk; V. B. Odzhayev; A. K. Panfilenko; A. N. Petlitsky; V. S. Prosolovich; V. A. Filipyenya; Yu. N. Yankovsky20202020, vol.49, no.4



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