期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
Study of the Magneto-Optical Properties of Structures on Curved Surfaces for Creating Memory Elements on Magnetic VorticesA. V. Prokaznikov; V. A. Paporkov20202020, vol.49, no.5
Charge Transport Mechanism in a Formless Memristor Based on Silicon NitrideO. M. Orlov; A. A. Gismatulin; V. A. Gritsenko; D. S. Mizginov20202020, vol.49, no.5
Ab Initio Modeling of the Electronic and Energy Structure and Opening the Band Gap of a 4p-Element-Doped Graphene MonolayerM. M. Asadov; S. S. Guseinova; V. F. Lukichev20202020, vol.49, no.5
Study of the Relaxational Polarization Dynamics of the LiPON Solid ElectrolyteA. S. Rudyi; M. E. Lebedev; A. A. Mironenko; L. A. Mazaletskii; V. V. Naumov; A. V. Novozhilova; I. S. Fedorov; A. B. Churilov20202020, vol.49, no.5
Simulation of Resistive Switching in Memristor Structures Based on Transition Metal OxidesA. E. Rogozhin; O. O. Permyakova20202020, vol.49, no.5
Simulation of Transients in a Majority Gate upon Switching and Collecting Charge from the Track of a Single ParticleV. Ya. Stenin; Yu. V. Katunin20202020, vol.49, no.5
Modeling the Characteristics of SOI CMOS Nanotransistors with an Asymmetric Surrounding GateN. V. Masal’skii20202020, vol.49, no.5



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