期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2020 2021 2022 2023

2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO_2 in a Plasma of a Mixture of HBr+O_2A. M. Efremov; V. B. Betelin; K.-H. Kwon20202020, vol.49, no.6
Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon TransistorsT. A. Ismailov; A. R. Shakhmaeva; B. A. Shangereeva20202020, vol.49, no.6
Thermal Atomic Layer Deposition of TiN_x. Using TiCl_4 and N_2H_4A. I. Abdulagatov; M. Kh. Rabadanov; I. M. Abdulagatov20202020, vol.49, no.6
Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80-100 GHz Frequency RangeD. L. Gnatyuk; R. R. Galiev; A. V. Zuev; S. L. Krapukhina; M. V. Maitama; P. P. Maltsev; O. S. Matveenko; Yu. V. Fedorov20202020, vol.49, no.6
Injection Diffusion-Drift Pulse FormerD. S. Gaev; S. Sh. Rekhviashvili20202020, vol.49, no.6
Amorphization of Vanadium Oxides during the Reversible Insertion of LithiumA. M. Skundin; A. A. Mironenko; A. S. Rudyi; I. S. Fedorov; S. V. Vasiliev; L. A. Mazaletsky; Yu. S. Tortseva; O. E. Kuznetsov20202020, vol.49, no.6
Effect of Point Defects on the Electromigration Rate at the Interface of Joined MaterialsT. M. Makhviladze; M. E. Sarychev20202020, vol.49, no.6
Spots Concept for Problems of Artificial Intelligence and Algorithms of Neuromorphic SystemsN. A. Simonov20202020, vol.49, no.6
Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-GateV. I. Egorkin; V. E. Zemlyakov; V. V. Kapaev; O. B. Kukhtyaeva20202020, vol.49, no.6
Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaS_xSe_(1 - x) (0 ≤ x ≤ 1)S. M. Asadov; S. N. Mustafaeva; V. F. Lukichev20202020, vol.49, no.6



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