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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2023
2020, vol.49, no.1
2020, vol.49, no.2
2020, vol.49, no.3
2020, vol.49, no.4
2020, vol.49, no.5
2020, vol.49, no.6
2020, vol.49, no.7
2020, vol.49, no.8
题名
作者
出版年
年卷期
Spectrophotometric Monitoring of Chloride Electrolyte for the Electrochemical Deposition of Permalloy
R. D. Tikhonov; S. A. Polomoshnov; D. V. Kostuk
2020
2020, vol.49, no.7
Thermal Activation of Getters in Magnetron Production Technology
A. A. Polunina; V. S. Petrov; I. F. Khanbekov; I. P. Li; A. I. Gaidar; D. N. Loktev
2020
2020, vol.49, no.7
Determination of the Operating Time to Failure of a Sub-100-nm MOS Transistor Gate Dielectric Using Accelerated Tests
A. S. Sivchenko; E. V. Kuznetsov; A. N. Saurov
2020
2020, vol.49, no.7
Thermal Stabilization of the Geometric Parameters of an Array of Silver Nanoparticles Obtained by Vacuum-Thermal Evaporation on an Unheated Substrate
D. G. Gromov; S. V. Dubkov; G. S. Eritsyan; A. I. Savitsky; V. A. Bykov; Yu. A. Bobrov
2020
2020, vol.49, no.7
Thermomechanical Strength of Element Connections in Microelectronic Modules
A. I. Pogalov; A. Yu. Titov; S. P. Timoshenkov
2020
2020, vol.49, no.7
Determining the Junction-to-Case Thermal Resistance of a Semiconductor Device from Its Cooling Curve
N. L. Evdokimova; V. V. Dolgov; K. A. Ivanov
2020
2020, vol.49, no.7
The Special Features of Simulation of the Current-Voltage Characteristics of JFETs in the Cryogenic Temperature Range
K. O. Petrosyants; M. R. Ismail-Zade; L. M. Sambursky
2020
2020, vol.49, no.7
Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional Crystal
T. I. Makovskaya; A. L. Danilyuk; A. V. Krivosheeva; V. L. Shaposhnikov; V. E. Borisenko
2020
2020, vol.49, no.7
Active Processor Hardware Stack
A. A. Semenov; D. A. Usanov; A. S. Dronkin
2020
2020, vol.49, no.7
Study of SOI Field-Effect Hall Sensors in the Partial Depletion Mode
M. A. Korolev; V. N. Mordkovich; A. V. Leonov; S. S. Devlikanova
2020
2020, vol.49, no.7
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