期刊


ISSN0429-8284
刊名Fuji electric review
参考译名富士电工评论
收藏年代1999～2024



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2005 2006 2007 2008 2009 2010
2011 2012 2013 2014 2015 2016
2017 2018 2019 2020 2021 2022
2023 2024

2022, vol.68, no.1 2022, vol.68, no.2 2022, vol.68, no.3 2022, vol.68, no.4

题名作者出版年年卷期
Trench SBD-Integrated SiC-MOSFET To Suppress Bipolar DegradationBABA, Masakazu; TAWARA, Takeshi; TAKENAKA, Kensuke20222022, vol.68, no.4
Auto-Zero Amplifier Technology for Intelligent Power SwitchesIWAMOTO, Motomitsu; TOYODA, Yoshiaki; KATAKURA, Hideaki20222022, vol.68, no.4
"FA8C00 Series" 7th-Generation PWM Power Supply Control ICsMATSUMOTO, Shinji; YAMANE, Hiroki; MIYAGI, Kodai20222022, vol.68, no.4
3.3-kV 7th-Generation "X Series" IGBT Chip TechnologyIKURA, Yoshihiro; HARADA, Yuichi; SEKINO, Yusuke20222022, vol.68, no.4
Line-Up of Compact 7th-Generation IGBT-IPMs with RC-IGBTsKUROSAWA, Eiji; JOZUKA, Naohiko; KARAMOTO, Yuki20222022, vol.68, no.4
Line-Up Expansion of 2nd-Generation 1,700-V All-SiC ModulesTAKAKU, Taku; TAKASAKI, Aiko; OKUMURA, Keiji20222022, vol.68, no.4
Package Technology for Achieving Higher Power Density in IGBT Modules for xEVsSATO, Yushi; ADACHI, Shinichiro; HIGASHI, Nobuhiro20222022, vol.68, no.4
Power Semiconductors Contributing to Mobility and Energy ManagementONISHI, Yasuhiko; MIYASAKA, Tadashi; IKAWA, Osamu20222022, vol.68, no.4
Power Semiconductor Devices -Driving Technology for Power Conversion SystemsLORENZ, Leo20222022, vol.68, no.4
2nd-Generation Discrete SiC-SBD 1,200-V SeriesHARA, Yukihito; MIYAMOTO, Shin; NAKAMURA, Yuji20222022, vol.68, no.3
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