期刊


ISSN0429-8284
刊名Fuji electric review
参考译名富士电工评论
收藏年代1999～2022



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2022, vol.68, no.1 2022, vol.68, no.2 2022, vol.68, no.3 2022, vol.68, no.4

题名作者出版年年卷期
Trench SBD-Integrated SiC-MOSFET To Suppress Bipolar DegradationBABA, Masakazu; TAWARA, Takeshi; TAKENAKA, Kensuke20222022, vol.68, no.4
Auto-Zero Amplifier Technology for Intelligent Power SwitchesIWAMOTO, Motomitsu; TOYODA, Yoshiaki; KATAKURA, Hideaki20222022, vol.68, no.4
"FA8C00 Series" 7th-Generation PWM Power Supply Control ICsMATSUMOTO, Shinji; YAMANE, Hiroki; MIYAGI, Kodai20222022, vol.68, no.4
3.3-kV 7th-Generation "X Series" IGBT Chip TechnologyIKURA, Yoshihiro; HARADA, Yuichi; SEKINO, Yusuke20222022, vol.68, no.4
Line-Up of Compact 7th-Generation IGBT-IPMs with RC-IGBTsKUROSAWA, Eiji; JOZUKA, Naohiko; KARAMOTO, Yuki20222022, vol.68, no.4
Line-Up Expansion of 2nd-Generation 1,700-V All-SiC ModulesTAKAKU, Taku; TAKASAKI, Aiko; OKUMURA, Keiji20222022, vol.68, no.4
Package Technology for Achieving Higher Power Density in IGBT Modules for xEVsSATO, Yushi; ADACHI, Shinichiro; HIGASHI, Nobuhiro20222022, vol.68, no.4
Power Semiconductors Contributing to Mobility and Energy ManagementONISHI, Yasuhiko; MIYASAKA, Tadashi; IKAWA, Osamu20222022, vol.68, no.4
Power Semiconductor Devices -Driving Technology for Power Conversion SystemsLORENZ, Leo20222022, vol.68, no.4
2nd-Generation Discrete SiC-SBD 1,200-V SeriesHARA, Yukihito; MIYAMOTO, Shin; NAKAMURA, Yuji20222022, vol.68, no.3
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