期刊


ISSN0429-8284
刊名Fuji electric review
参考译名富士电工评论
收藏年代1999～2023



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013 2014 2015 2016
2017 2018 2019 2020 2021 2022
2023

2023, vol.69, no.1 2023, vol.69, no.2 2023, vol.69, no.3 2023, vol.69, no.4

题名作者出版年年卷期
Wide Bandgap Power Semiconductors - Revolution or Evolution for the Energy Transition?De Doncker, Rik W20232023, vol.69, no.4
Power Semiconductors Contributing to Vehicle Electrification and Energy ManagementONISHI, Yasuhiko; MIYASAKA, Tadashi; IKAWA, Osamu20232023, vol.69, no.4
"M675" New IGBT Module for BEVs in ChinaTAKASHIMA, Kensuke; YOSHIDA, Soichi; TATEISHI, Yoshihiro20232023, vol.69, no.4
Improved Power Cycle Reliability for xEV ModulesNAKAMURA, Yoko; WATAKABE, Tsubasa; ASAI, Tatsuhiko20232023, vol.69, no.4
"HPnC" Industrial Large-Capacity IGBT ModuleHITACHI, Takahisa; KAWABATA, Junya; KODAIRA, Yoshihiro20232023, vol.69, no.4
"P638" 7th-Generation "X Series" Medium Capacity IGBT-IPMFUJII, Masanari; JOZUKA, Naohiko; KARAMOTO, Yuki20232023, vol.69, no.4
"FA6C60 Series" 4.5th-Generation LLC Current-Resonant Control ICsKOBAYASHI, Yoshinori; YAMAJI, Masaharu; YAMAMOTO, Tsuyoshi20232023, vol.69, no.4
"X Series" 7th-Generation 2,300-V IGBT/FWD ChipsMATSUMOTO, Haruki; TAMURA, Takahiro; KARAMOTO, Yuki20232023, vol.69, no.4
Built-In Gate Resistor Chip Technology for High-Power ModulesKARINO, Taichi; MIYAZAWA, Yasuhiro; KAMADA, Seigo20232023, vol.69, no.4
SJ Structure to Reduce Loss and Improve Reliability of SiC-MOSFETsTAWARA, Takeshi; TAKENAKA, Kensuke; NARITA, Shunki20232023, vol.69, no.4
12



制造业外文文献服务平台