期刊


ISSN1475-7435
刊名International Journal of Nanotechnology
参考译名国际纳米技术杂志
收藏年代2004～2024



全部

2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023 2024

2024, vol.21, no.1/2 2024, vol.21, no.3 2024, vol.21, no.4/5

题名作者出版年年卷期
Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wellsMazwan, M.; Ng, S. S.; Syamsul, M.; Shuhaimi, A.; Pakhuruddin, M. Z.; Rahim, A. F. A.20242024, vol.21, no.4/5
Effect of post-deposition annealing on CeO 2 passivation layer spin coated on silicon substrate in nitrogen ambienceShekkeer, Kammutty Musliyarakath Abdul; Cheong, Kuan Yew; Quah, Hock Jin20242024, vol.21, no.4/5
Fabrication of ultraviolet photodetector using Au nanoparticles decorated ZnO NRs/GaNAbed, Shireen Mohammed; Mohammad, Sabah M.; Hassan, Zainuriah; Muhammad, A.; Ahmad, M. A.; Syamsul, Mohd20242024, vol.21, no.4/5
Effect of GaN cap layer towards ohmic contact of open-gate Cr AlGaN/GaN high electron mobility transistorFauzi, Najihah; Firdaus, Amirul; Falina, Shaili; Mohammad, Sabah M.; Inaba, Masafumi; Kawarada, Hiroshi; Syamsul, Mohd20242024, vol.21, no.4/5
Energy band gap investigation of Al nanoparticles/polystyrene nanocomposite foilsNaser, H.; Mohammad, S. M.; Shanshool, H. M.; Hassan, Z.; Al-Hazeem, Z.20242024, vol.21, no.4/5
Laser synthesis route for production of GaN nanocrystals for optical sensor protectionBakar, M. A. A.; Mohammad, S. M.; Yinyuan, Z.; Razak, S. N. A.; Abdullah, M.20242024, vol.21, no.4/5
Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devicesIslam, N.; Baharin, M. S. N. S.; Rahim, A. F. A.; Khan, M. F. A. J.; Ghazali, N. A.; Bakar, A. S. A.; Mohamed, M. F. P.20242024, vol.21, no.4/5
Characteristics of InGaN/AlN heterostructure grown by using MOCVD techniqueYusof, Ahmad Sauffi; Hassan, Zainuriah; Ng, Sha Shiong; Ahmad, Mohd Anas; Lim, Way Foong; Hamady, Sidi Ould Saad; Fressengeas, Nicolas20242024, vol.21, no.4/5
Effects of post-deposition annealing in argon-oxygen-argon ambient on physical and electrical characteristics of thulium oxide passivation layer on silicon substrateDeng, Junchen; Quah, Hock Jin20242024, vol.21, no.4/5
The effect of varying oxidising conditions for transformation of metallic cerium to cerium oxide filmsZabidi, A. R. M.; Hassan, Z.; Lim, W. F.20242024, vol.21, no.4/5
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