期刊


ISSN1475-7435
刊名International Journal of Nanotechnology
参考译名国际纳米技术杂志
收藏年代2004～2024



全部

2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023 2024

2024, vol.21, no.1/2 2024, vol.21, no.3 2024, vol.21, no.4/5 2024, vol.21, no.6

题名作者出版年年卷期
Annealing effects on post-deposition β-Ga 2O 3 thin film prepared through radiofrequency magnetron sputteringLiuhan Zhou; Lai Yang; Fashun Yang; Xu Wang; Kui MaLiuhan Zhou; Lai Yang; Fashun Yang; Xu Wang; Kui Ma20242024, vol.21, no.6
Intelligent overlay algorithm for medical data management based on wireless communication technology and feature fusionChangrong Peng; Xiaodong Zhang; Qian Liu; Xiaofang Zhao; Chenyang DaiChangrong Peng; Xiaodong Zhang; Qian Liu; Xiaofang Zhao; Chenyang Dai20242024, vol.21, no.6
Network security analysis on diseases reporting at wireless sensor networkZhang Yanling; Zhang TingZhang Yanling; Zhang Ting20242024, vol.21, no.6
Stereoscopic display of architectural design images based on virtual reality technologyLing Tang; Lijuan YaoLing Tang; Lijuan Yao20242024, vol.21, no.6
Application of micro and nano bubble technology in water level recovery of water conservancy construction engineeringDongling Zhang; Yuzhen Wang; Fei LuoDongling Zhang; Yuzhen Wang; Fei Luo20242024, vol.21, no.6
Evaluation method for colour matching using artificial intelligence technologyLijuan Yao; Ling TangLijuan Yao; Ling Tang20242024, vol.21, no.6
Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wellsMazwan, M.; Ng, S. S.; Syamsul, M.; Shuhaimi, A.; Pakhuruddin, M. Z.; Rahim, A. F. A.20242024, vol.21, no.4/5
Effect of post-deposition annealing on CeO 2 passivation layer spin coated on silicon substrate in nitrogen ambienceShekkeer, Kammutty Musliyarakath Abdul; Cheong, Kuan Yew; Quah, Hock Jin20242024, vol.21, no.4/5
Fabrication of ultraviolet photodetector using Au nanoparticles decorated ZnO NRs/GaNAbed, Shireen Mohammed; Mohammad, Sabah M.; Hassan, Zainuriah; Muhammad, A.; Ahmad, M. A.; Syamsul, Mohd20242024, vol.21, no.4/5
Effect of GaN cap layer towards ohmic contact of open-gate Cr AlGaN/GaN high electron mobility transistorFauzi, Najihah; Firdaus, Amirul; Falina, Shaili; Mohammad, Sabah M.; Inaba, Masafumi; Kawarada, Hiroshi; Syamsul, Mohd20242024, vol.21, no.4/5
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