期刊


ISSN0018-9219
刊名Proceedings of the IEEE
参考译名电气与电子工程师学会会报
收藏年代1998～2013



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007 2008 2009
2010 2011 2012 2013

2002, vol.90, no.1 2002, vol.90, no.10 2002, vol.90, no.11 2002, vol.90, no.12 2002, vol.90, no.2 2002, vol.90, no.3
2002, vol.90, no.4 2002, vol.90, no.5 2002, vol.90, no.6 2002, vol.90, no.7 2002, vol.90, no.8 2002, vol.90, no.9

题名作者出版年年卷期
SiC materials-progress, status, and potential roadblocksAdrian R. Powell; Larry B. Rowland20022002, vol.90, no.6
SiC power-switching devices-the second electronics revolution?James A. Cooper, Jr.; Anant Agarwal20022002, vol.90, no.6
Silicon carbide benefits and advantages for power electronics circuits and systemsAhmed Elasser; T. Paul Chow20022002, vol.90, no.6
SiC microwave power technologiesR. C. Clarke; John W. Palmour20022002, vol.90, no.6
Gallium nitride materials - progress, status, and potential roadblocksRobert F. Davis; Amy M. Roskowski; Edward A. Preble; James S. Speck; Ben Heying; Jaime A. Freitas, Jr.; Evan R. Glaser; William Carlos20022002, vol.90, no.6
Short-wavelength solar-blind detectors - status, prospects, and marketsManijeh Razeghi20022002, vol.90, no.6
Impact of low-temperature buffer layers on nitride-based optoelectronicsHiroshi Amano; Satoshi Kamiyama; Isamu Akasaki20022002, vol.90, no.6
AlGaN/GaN HEMTs - an overview of device operation and applicationsUmesh K. Mishra; Primit Parikh; Yi-Feng Wu20022002, vol.90, no.6
SiC and GaN transistors - is there one winner for microwave power applications?R. J. Trew20022002, vol.90, no.6
Trapping effects in GaN AND SiC microwave FETsSteven C. Binari; P. B. Klein; Thomas E. Kazior20022002, vol.90, no.6
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