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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2010, vol.39, no.1
2010, vol.39, no.2
2010, vol.39, no.3
2010, vol.39, no.4
2010, vol.39, no.5
2010, vol.39, no.6
题名
作者
出版年
年卷期
Nano- and Micrometer-Scale Thin-Film-Interconnection Failure Theory and Simulation and Metallization Lifetime Prediction, Part 2: Polycrystalline-Line Degradation and Bulk Failure
K. A. Valiev; R. V. Goldstein; Yu. V. Zhitnikov; T. M. Makhviladze; M. E. Sarychev
2010
2010, vol.39, no.3
Mathematical Simulation of the Processes of Generation of "Shock Waves" in a Two-Dimensional Electron Gas in the Channel of a Ballistic Field-Effect Transistor
I. A. Semenikhin; E. A. Vostrikova
2010
2010, vol.39, no.3
Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics
A. V. Zenkevich; Yu. Yu. Lebedinskii; Yu. A. Matveev; N. S. Barantsev; Yu. A. Voronov; A. V. Sogoyan; V. N. Nevolin; V. I. Chichkov; S. Spiga; M. Fanchulli
2010
2010, vol.39, no.3
Effect of Broadening the Discrete Levels of the Granule on the Character of the Current - Voltage Characteristic of a Single-Electron Diode
A. V. Babich; V. V. Pogosov; A. M. Baginskii; N. N. Nagornaya; A. G. Kravtsova
2010
2010, vol.39, no.3
Chemical Nanotechnology of Oxide and Nitride Low-Dimensional Structures on a Semiconductor Matrix
Yu. K. Ezhovskii
2010
2010, vol.39, no.3
Self-Organization of Germanium Highly Ordered Nanoclusters by the Deposition of Polycrystalline Silicon Films Doped with Germanium
A. A. Kovalevskii; N. V. Babushkina; D. V. Plyakin; A. C. Strogova
2010
2010, vol.39, no.3
Low Temperature Pulsed Gas-Phase Deposition of Thin Layers of Metallic Ruthenium for Micro- and Nanoelectronics: Part 2. Kinetics of the Growth of Ruthenium Layers
V. Yu. Vasilyev
2010
2010, vol.39, no.3
Delta-Sigma Modulator with a 50-MHz Sampling Rate Implemented in 0.18-μm CMOS Technology
A. S. Korotkov; M. M. Pilipko; D. V. Morozov; J. Hauer
2010
2010, vol.39, no.3
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