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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2003
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2023
2016, vol.45, no.1
2016, vol.45, no.2
2016, vol.45, no.3
2016, vol.45, no.4
2016, vol.45, no.5
2016, vol.45, no.6
2016, vol.45, no.7
2016, vol.45, no.8/9
题名
作者
出版年
年卷期
Simulation of the Spectroscopic Response and Electron Dynamics in a Double Quantum Dot
A. V. Tsukanov; V. G. Chekmachev
2016
2016, vol.45, no.1
Influence of the Annealing Temperature on the Ferroelectric Properties of Niobium-Doped Strontium-Bismuth Tantalate
D. A. Golosov; S. M. Zavadski; V. V. Kolos; A. S. Turtsevich; D. E. Okodzhi
2016
2016, vol.45, no.1
Formation and Certain Properties of Zinc Chalcogenide Nanolayers on Semiconductor Matrices
Yu. K. Ezhovskii; N. V. Zakharova
2016
2016, vol.45, no.1
Characteristics of Chloride Memristors Based on Nanothick Metal Films
R. Yu. Rozanov; V. A. Kondrashov; V. K. Nevolin; Yu. A. Chaplygin
2016
2016, vol.45, no.1
System-on-Chip: Specifics of Radiation Behavior and Estimation of Radiation Hardness
O. A. Kalashnikov; P. V. Nekrasov; A. Yu. Nikiforov; V. A. Telets; G. V. Chukov; V. V. Elesin
2016
2016, vol.45, no.1
Effect of a Diamond Heat Spreader on the Characteristics of Gallium Nitride-Based Transistors
K. S. Grishakov; V. F. Elesin; N. I. Kargin; R. V. Ryzhuk; S. V. Minnebaev
2016
2016, vol.45, no.1
Influence of Ionizing Radiation on the Parameters of an Operational Amplifier Based on Complementary Bipolar Transistors
O. V. Dvornikov; V. A. Tchekhovski; V. L. Dziatlau; N. N. Prokopenko
2016
2016, vol.45, no.1
Multilayer Graphene-Based Flash Memory
Yu. N. Novikov; V. A. Gritsenko; G. Ya. Krasnikov; O. M. Orlov
2016
2016, vol.45, no.1
The Circuit and Functional Blocks for Radiation-Hard Transceiver LSICs in SOI CMOS
G. N. Nazarova; V. V. Elesin; A. Yu. Nikiforov; A. G. Kuznetsov; N. A. Usachev; D. M. Amburkin
2016
2016, vol.45, no.1
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