期刊


ISSN0914-4935
刊名Sensors and materials
参考译名传感器与材料
收藏年代1998~2023



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023

2014, vol.26, no.1 2014, vol.26, no.10 2014, vol.26, no.2 2014, vol.26, no.3 2014, vol.26, no.4 2014, vol.26, no.5
2014, vol.26, no.6 2014, vol.26, no.7 2014, vol.26, no.8 2014, vol.26, no.9

题名作者出版年年卷期
Ammonothermal Bulk GaN Growth and Its ProcessingTadao Hashimoto; Edward Letts; Daryl Key; Keith Male; Matthew Michaels; Sierra Hoff20142014, vol.26, no.6
Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes-Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting DiodesNatsuko Aota; Hideo Aida; Yutaka Kimura; Yuki Kawamata20142014, vol.26, no.6
Novel Chemical Mechanical Polishing/Plasma-Chemical Vaporization Machining (CMP/P-CVM) Combined Processing of Hard-to-Process Crystals Based on Innovative ConceptsToshiro K. Doi; Yasuhisa Sano; Syuhei Kurowaka; Hideo Aida; Osamu Ohnishi; Michio Uneda; Koki Ohyama20142014, vol.26, no.6
Micro-Laser-Assisted Machining: The Future of Manufacturing Ceramics and SemiconductorsDeepak Ravindra; John Patten20142014, vol.26, no.6
Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced DamageYasuhisa Sano; Toshiro K. Doi; Syuhei Kurokawa; Hideo Aida; Osamu Ohnishi; Michio Uneda; Kousuke Shiozawa; Yu Okada; Kazuto Yamauchi20142014, vol.26, no.6
Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDsMichio Uneda; Yuki Maeda; Kazutaka Shibuya; Yoshio Nakamura; Daizo Ichikawa; Kiyomi Fujii; Ken-ichi Ishikawa20142014, vol.26, no.6
Design and Trial Production of Microstructured ZnO Gas SensorQiulin Tan; Chao Li; Wenyi Liu; Chenyang Xue; Wendong Zhang; Jun Liu; Xiaxia Ji; Jijun Xiong20142014, vol.26, no.6