期刊


ISSN0957-4522
刊名Journal of Materials Science
参考译名材料科学杂志：电子材料
收藏年代1999～2013



全部

1999 2000 2001 2002 2003 2004
2005 2006 2007 2008 2009 2010
2011 2012 2013

2000, vol.11, no.1 2000, vol.11, no.2 2000, vol.11, no.3 2000, vol.11, no.4 2000, vol.11, no.5 2000, vol.11, no.6
2000, vol.11, no.7 2000, vol.11, no.8 2000, vol.11, no.9

题名作者出版年年卷期
Annealing effects on electrical characteristics of 100 MeV 28{sup left}Si implantation in GaAsA. M. Narsale; A. R. Damle; Yousuf P. Ali; D. Kanjilal; B. M. Arora; A. P. Shah; S. G. Lokhre; V. P. Salvi20002000, vol.11, no.5
Chemical solution method for fabrication of nanocrystalline α-Fe{sub}2O{sub}3 thin filmsBiljana Pejova; Metodija Najdoski; Ivan Grozdanov; Ardijana Isahi20002000, vol.11, no.5
Composition and electronic properties of a-SiGe:H alloys produced from ultrathin layers of a-Si:H/a-Ge:HM. S. Abo Ghazala20002000, vol.11, no.5
Conductive and transparent ZnO:Al thin films obtained by chemical sprayM. De La L. Olvera; A. Maldonado; R. Asomoza; R. Castanedo-Perez; G. Torres-Delgado; J. Caneta-Ortega20002000, vol.11, no.5
Dielectric properties of sintered materials prepared from glass-ZrO{sub}2-SrTiO{sub}3 mixturesKochiro Tsuzuku; Seiichi Taruta; Nobuo Takusagawa; Hiroshi Kishi20002000, vol.11, no.5
Direct silver bonding - an alternative for substrates in power semiconductor packagingC. Chr. Schuler; A. Stuck; N. Beck; H. Keser; U. Tack20002000, vol.11, no.5
Electrical and optical characterization of regrown PHEMT layer structures on etched GaAs surfacesB. Sathya; K. Radhakrishnan; H. Q. Zheng; K. Yuan; G. I. Ng; S. F. Yoon20002000, vol.11, no.5
EPR and magnetic susceptibility studies on V{sub}2O{sub}5-P{sub}2O{sub}5-PbO glassesI. Ardelean; O. Cozar; Gh. Ilonca; V. Simon; V. Mih; C. Craciun; S. Simon20002000, vol.11, no.5
Influence of poling conditions on the piezoelectric properties of PZT ceramicsYamakawa Takahiro; Kataoka Masako; Sashida Norikazu20002000, vol.11, no.5
Microstructure and electrical properties of the SnO{sub}2 glass composite containing Cu particles precipitated by reducing copper oxides - effect of particle size of reducing agentHaruhisa Shiomi; Kaori Umehara20002000, vol.11, no.5
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