期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2013, vol.42, no.1 2013, vol.42, no.2 2013, vol.42, no.3 2013, vol.42, no.4 2013, vol.42, no.5 2013, vol.42, no.6
2013, vol.42, no.7 2013, vol.42, no.8

题名作者出版年年卷期
Wireless Magnetoresistive Microsystem for Magnetic Field MeasurementsV. V. Amelichev; A. N. Saurov; V. V. Aravin; A. A. Reznev; A. A. Demin; M. V. Khokhlov20132013, vol.42, no.7
Technology and Electric Characteristics of the Field-Effect Hall Sensor Based on SOI StructureL. N. Dolgyi; I. Yu. Lovshenko; V. V. Nelayev20132013, vol.42, no.7
A Threshold Position-Sensitive Photoswitch with Negative Differential ResistanceE. V. Lychagin; S. G. Novikov; N. T. Gurin20132013, vol.42, no.7
Effect of the Design and Manufacture Parameters on the Characteristics of a Triple-Collector Bipolar MagnetotransistorA. V. Kozlov; M. A. Korolev; A. A. Cheremisinov; A. A. Zhukov; R. D. Tikhonov20132013, vol.42, no.7
Mathematical Models and Hardware & Software for Highly Accurate Electronic Temperature MetersYu. I. Shtern; Ya. S. Kozhevnikov; V. M. Rykov; R. E. Mironov20132013, vol.42, no.7
Signal Conditioning Circuitry in Ultrahigh-Speed Photoelectric Raster InterpolatorsV. B. Topil'skii20132013, vol.42, no.7
The Analysis of the Performance of Nanometer Intellectual Property Blocks Based on Interval SimulationS. V. Gavrilov; O. N. Gudkova; A. L. Stempkovskiy20132013, vol.42, no.7
Use of the Effect of Phase Error Accumulation in Ring Oscillators to Estimate Time Parameters of Digital Elements of Integrated CircuitsS. O. Churayev20132013, vol.42, no.7
CMOS-Operational Amplifier with n-Channel Output Followers, Increased Gain, and Short Settling TimeA. B. Makarov20132013, vol.42, no.7
Procedure of Calculating Parameters of Sense Amplifiers for the EEPROM and Flash MemoryE. S. Vasil'ev20132013, vol.42, no.7
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