期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2013, vol.42, no.1 2013, vol.42, no.2 2013, vol.42, no.3 2013, vol.42, no.4 2013, vol.42, no.5 2013, vol.42, no.6
2013, vol.42, no.7 2013, vol.42, no.8

题名作者出版年年卷期
New Organometallic Precursors and Processes for Chemical Vapor Deposition in the Technology of NanomaterialsF. A. Kuznetsov; T. P. Smirnova; N. I. Fainer; N. B. Morozova; I. K. Igumenov20132013, vol.42, no.8
Thermoelectric Properties of the (Bi,Sb)_2Te_3-Based Material Obtained by Spark Plasma SinteringI. A. Drabkin; V. V. Karataev; V. B. Osvenskii; Yu. N. Parkhomenko; A. I. Sorokin; L. P. Bulat; G. I. Pivovarov; V. T. Bublik; N. Yu. Tabachkova20132013, vol.42, no.8
Isotopic Effects in the Infrared Absorption Spectra of Electrically Active Impurities in Silicon 28, 29, and 30 with High Isotopic EnrichmentT. V. Kotereva; A. V. Gusev; V. A. Gavva; E. A. Kozyrev20132013, vol.42, no.8
Initiation of a Polarized State in Thin Lithium Niobate Films Synthesized on Isolated Silicon SubstratesD. A. Kiselev; R. N. Zhukov; A. S. Bykov; M. D. Malinkovich; Yu. N. Parkhomenko; E. A. Vygovskaya20132013, vol.42, no.8
Promising Materials of AcoustoelectronicsD. V. Roshchupkin; D. V. Irzhak; E. V. Emelin; R. R. Fakhrtdinov; O. A. Buzanov; S. A. Sakharov20132013, vol.42, no.8
Features of Defect Formation under the Thermal Treatment of Dislocation-Free Single-Crystal Large-Diameter Silicon Wafers with the Specified Distribution of Oxygen-Containing Gettering Centers in the BulkYu. B. Vasil'ev; N. A. Verezub; M. V. Mezhennyi; V. S. Prosolovich; A. I. Prostomolotov; V. Ya. Reznik20132013, vol.42, no.8
New Trends in the Development of the Technology for the Production of Ultraviolet Light-Emitting DiodesS. Yu. Kurin; A. A. Antipov; I. S. Barash; V. T. Bublik; H. Helava; E. N. Mokhov; S. S. Nagalyuk; A. D. Roenkov; T. Yu. Chemekova; K. D. Scherbatchev; Yu. N. Makarov20132013, vol.42, no.8
Studying the Uniformity of the Surface Resistance of Ti, Al, Ni, Cr, and Au Metal Films on SiliconK. D. Vanyukhin; S. P. Kobeleva; Yu. A. Kontsevoi; V. A. Kurmachev; L. A. Seidman20132013, vol.42, no.8
Mechanisms of Electroconductivity in Silicon-Carbon Nanocomposites with Nanosized Tungsten Inclusions within a Temperature Range of 20-200℃I. M. Anfimov; S. P. Kobeleva; M. D. Malinkovich; I. V. Shchemerov; O. V. Toporova; Yu. N. Parkhomenko20132013, vol.42, no.8
Studying the Formation of Nanoporous and Nanotubular Titanium Layers by Electrochemical Impedance SpectroscopyL. A. Balagurov; M. A. Agafonova; E. A. Petrova; A. G. Yakovenko20132013, vol.42, no.8
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