期刊


ISSN1475-7435
刊名International Journal of Nanotechnology
参考译名国际纳米技术杂志
收藏年代2004～2023



全部

2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023

2022, vol.19, no.1 2022, vol.19, no.12 2022, vol.19, no.2/5 2022, vol.19, no.6/11

题名作者出版年年卷期
Growth, characterisation and thermal stability of AlN/Ti/AlN/SiO2 multilayer selective solar absorber coating for high temperature applicationsBello, M.; Subramani, S.20222022, vol.19, no.2/5
Analysis on the performance of normalised gain difference power allocation for MIMO-NOMA-based VLCElewah, Ibrahim A.; Jasman, Faezah; Ng, Sha Shiong20222022, vol.19, no.2/5
Effect of nucleation time on GaN layer grown on different shapes of patterned sapphire substrateTaib, M. Ikram Md; Waheeda, S. N.; Zainal, N.20222022, vol.19, no.2/5
X-ray diffraction analysis of gallium oxide thin films synthesised by a simple and cost-effective methodWang, T.; Ng, S. S.20222022, vol.19, no.2/5
Effects of post-annealing on GaN thin films growth using RF magnetron sputteringOthman, N. A.; Nayan, N.; Mustafa, M. K.; Bakri, A. S.; Azman, Z.; Raship, N. A.; Hasnan, M. M. I. M.; Mamat, M. H.; Yusop, M. Z. M.; Bakar, A. S. A.; Ahmad, M. Y.20222022, vol.19, no.2/5
Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric propertiesAzman, Zulkifli; Nayan, Nafarizal; Hasnan, Megat Muhammad Lkhsan Megat; Abu Bakar, Ahmad Shuhaimi; Mamat, Mohamad Hafiz; Yusop, Mohd Zamri Mohd20222022, vol.19, no.2/5
Effects of different growth temperatures towards indium incorporation in InGaN quantum well heterostructureSeliman, M. A. C.; Hassan, Z.; Yusof, A. S.; Ahmad, M. A.; Hamzah, N. A.; Asri, R. I. M.; Taib, M. I. M.; Baharin, M. S. N. S.20222022, vol.19, no.2/5
Encapsulation of Ag nanoparticle-carbon composite and enhancement of visible light ZnO nanorods photodiodeRajamanickam, Suvindraj; Mohammad, Sabah M.; Hassan, Z.; Muhammad, Aminu; Kabaa, E. A.20222022, vol.19, no.2/5
Study of glaring effect from light emitting diodes via lens approachJocelynn, K. X. Y.; Lim, W. F.20222022, vol.19, no.2/5
Influence of growth temperature of p-GaN layer on the characteristics of InGaN/GaN blue light emitting diodesAsri, R. I. M.; Hamzah, N. A.; Ahmad, M. A.; Alias, E. A.; Sahar, M. A. A. Z. M.; Abdullah, M.20222022, vol.19, no.2/5
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