期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2006, vol.27, no.1 2006, vol.27, no.10 2006, vol.27, no.11 2006, vol.27, no.12 2006, vol.27, no.2 2006, vol.27, no.3
2006, vol.27, no.4 2006, vol.27, no.5 2006, vol.27, no.6 2006, vol.27, no.7 2006, vol.27, no.8 2006, vol.27, no.9

题名作者出版年年卷期
Enhancement-Mode Si{sub}3N{sub}4/AlGaN/GaN MISHFETsRuonan Wang; Yong Cai; Chi-Wai Tang; Kei May Lau; Kevin J. Chen20062006, vol.27, no.10
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire SubstratesW. Huang; T. Khan; T. P. Chow20062006, vol.27, no.10
The Impact of Deep Ni Salicidation and NH{sub}3 Plasma Treatment on Nano-SOI FinFETsHsin-Chiang You; Po-Yi Kuo; Fu-Hsiang Ko; Tien-Sheng Chao; Tan-Fu Lei20062006, vol.27, no.10
NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based DielectricsGaurav Thareja; Huang Chun Wen; Rusty Harris; Prashant Majhi; Byung Hun Lee; Jack C. Lee20062006, vol.27, no.10
RF MEMS Oscillator with Integrated Resistive TransductionR. B. Reichenbach; M. Zalalutdinov; J. M. Parpia; H. G. Craighead20062006, vol.27, no.10
SET to RESET Programming in Phase Change MemoriesIlya V. Karpov; Sergey A. Kostylev20062006, vol.27, no.10
Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS ProcessC. Ren; D. S. H. Chan; W. Y. Loh; S. Balakumar; A. Y. Du; C. H. Tung; G. Q. Lo; R. Kumar; N. Balasubramanian; D.-L. Kwong20062006, vol.27, no.10
0.86-nm CET Gate Stacks With Epitaxial Gd{sub}2O{sub}3 High-k Dielectrics and FUSI NiSi Metal ElectrodesH. D. B. Gottlob; T. Echtermeyer; M. Schmidt; T. Mollenhauer; J. K. Efavi; T. Wahlbrink; M. C. Lemme; M. Czernohorsky; E. Bugiel; A. Fissel; H. J. Osten; H. Kurz20062006, vol.27, no.10
An Assessment of the Location of As-Grown Electron Traps in HfO{sub}2/HfSiO StacksJ. F. Zhang; C. Z. Zhao; M. B. Zahid; G. Groeseneken; R. Degraeve; S. De Gendt20062006, vol.27, no.10
Improvement in High-k (HfO{sub}2/SiO{sub}2) Reliability by Incorporation of FluorineKang-ill Seo; Raghavasimhan Sreenivasan; Paul C. McIntyre; Krishna C. Saraswat20062006, vol.27, no.10
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