期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
RF-Enhanced Contacts to Wide-Bandgap DevicesG. Simin; Z.-J. Yang20072007, vol.28, no.1
Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation ModeA. Koudymov; C. X. Wang; V. Adivarahan; J. Yang; G. Simin; M. Asif Khan20072007, vol.28, no.1
DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer FusionChuanxin Lian; Huili (Grace) Xing; Chad S. Wang; Lee McCarthy; Dave Brown20072007, vol.28, no.1
Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi GateJ. Liu; D. L. Kwong20072007, vol.28, no.1
Resistive Switching Mechanism in Zn{sub}xCd{sub}(1-x)S Nonvolatile Memory DevicesZheng Wang; Peter B. Griffin; Jim McVittie; Simon Wong; Paul C. McIntyre; Yoshio Nishi20072007, vol.28, no.1
High-Performance Metal-Insulator-Metal Capacitors Using Amorphous BaSm{sub}2Ti{sub}4O{sub}12 Thin FilmYoung Hun Jeong; Jong Bong Lim; Sahn Nahm; Ho-Jung Sun; Hwack Joo Lee20072007, vol.28, no.1
Effect of F{sub}2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate DielectricMan Chang; Minseok Jo; Hokyung Park; Hyunsang Hwang; Byoung Hun Lee; Rino Choi20072007, vol.28, no.1
High-κ Al{sub}2O{sub}3-HfTiO Nanolaminates With Less Than 0.8-nm Equivalent Oxide ThicknessV. Mikhelashvili; G. Eisenstein20072007, vol.28, no.1
High-Quality Factor Electrolyte Insulator Silicon Capacitor for Wireless Chemical SensingJ. Garcia-Canton; A. Merlos; A. Baldi20072007, vol.28, no.1
Robust Coupled-Quantum-Well Structure for Use in Electrorefraction ModulatorsSasa Ristic; Nicolas A. F. Jaeger20072007, vol.28, no.1
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