期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power ApplicationsChia-Yuan Chang; Heng-Tung Hsu; Edward Yi Chang; Chien-I Kuo; Suman Datta; Marko Radosavljevic; Yasuyuki Miyamoto; Guo-Wei Huang20072007, vol.28, no.10
High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With f{sub}T = 436 GHzH. G. Liu; O. Ostinelli; Y. P. Zeng; C. R. Bolognesi20072007, vol.28, no.10
A Planar Gunn Diode Operating Above 100 GHzA. Khalid; N. J. Pilgrim; G. M. Dunn; M. C. Holland; C. R. Stanley; I. G. Thayne; D. R. S. Cumming20072007, vol.28, no.10
Monolithically Integrated Logic NOR Gate Based on GaAs/AlGaAs Three-Terminal JunctionsC. R. Muller; L. Worschech; P. Hopfner; S. Hofling; A. Forchel20072007, vol.28, no.10
High-Performance and Low-Temperature-Compatible p-Channel Polycrystalline-Silicon TFTs Using Hafnium-Silicate Gate DielectricMing-Jui Yang; Chao-Hsin Chien; Yi-Hsien Lu; Guang-Li Luo; Su-Ching Chiu; Chun-Che Lou; Tiao-Yuan Huang20072007, vol.28, no.10
Effect of Load Distribution on the Voltage Drop and the Luminance Variation in an AC-PDPJin-Sung Kim; Hyuk-Jae Lee20072007, vol.28, no.10
Impact of Preferential P-Diffusion Along the Grain Boundaries on Fine-Grained Polysilicon Solar CellsL. Carnel; I. Gordon; D. Van Gestel; D. Vanhaeren; P. Eyben; G. Beaucarne; J. Poortmans20072007, vol.28, no.10
Strained p-Channel FinFETs With Extended Π-Shaped Silicon-Germanium Source and Drain StressorsKian-Ming Tan; Tsung-Yang Liow; Rinus T. P. Lee; Keat Mun Hoe; Chih-Hang Tung; N. Balasubramanian; Ganesh S. Samudra; Yee-Chia Yeo20072007, vol.28, no.10
Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFETSubhash C. Rustagi; N. Singh; Y. F. Lim; G. Zhang; S. Wang; G. Q. Lo; N. Balasubramanian; D.-L. Kwong20072007, vol.28, no.10
NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate DielectricJingde Chen; X. P. Wang; Ming-Fu Li; S. J. Lee; M. B. Yu; C. Shen; Yee-Chia Yeo20072007, vol.28, no.10
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