期刊


ISSN0734-2101
刊名Journal of Vacuum Science & Technology
参考译名真空科学与技术，A辑：真空、表面与膜
收藏年代2000～2013



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013

2012, vol.30, no.1 2012, vol.30, no.2 2012, vol.30, no.3 2012, vol.30, no.4 2012, vol.30, no.5 2012, vol.30, no.6

题名作者出版年年卷期
Optimizing charge neutralization for a magnetic sector SIMS instrument in negative modeAlexander L. Pivovarov; Georgiy M. Guryanov20122012, vol.30, no.4
Selective chemical etch of gallium nitride by phosphoric acidChongmin Lee; Jennifer K. Hite; Michael A. Mastro; Jaime A. Freitas; Charles R. Eddy; Hong-Yeol Kim; Jihyun Kim20122012, vol.30, no.4
Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generationBilal Gokce; Daniel B. Dougherty; Kenan Gundogdu20122012, vol.30, no.4
Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case studyAxel Hemberg; Jean-Pierre Dauchot; Rony Snyders; Stephanos Konstantinidis20122012, vol.30, no.4
Characterization of geometrical factors for quantitative angle-resolved photoelectron spectroscopyEugenie Martinez; Alberto Herrera-Gomez; Mickael Allain; Olivier Renault; Alain Faure; Amal Chabli; Francois Bertin20122012, vol.30, no.4
Nanopillar ITO electrodes via argon plasma etchingJaron G. Van Dijken; Michael J. Brett20122012, vol.30, no.4
Pulsed high-density plasmas for advanced dry etching processesSamer Banna; Ankur Agarwal; Gilles Cunge; Maxime Darnon; Erwine Pargon; Olivier Joubert20122012, vol.30, no.4
Status and prospects of Al_(2)O_(3)-based surface passivation schemes for silicon solar cellsG. Dingemans; W. M. M. Kessels20122012, vol.30, no.4
Dry etching characteristics of TaN absorber for extreme ultraviolet mask with Ru buffer layerWanjae Park; Ohyung Kwon; Ki-Woong Whang; Jeongyun Lee20122012, vol.30, no.4
Comprehensive computer model for magnetron sputtering. I. Gas heating and rarefactionFrancisco J. Jimenez; Steven K. Dew20122012, vol.30, no.4
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