期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



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2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
High-Power AlGaN/GaN HEMTs for Ka-Band ApplicationsT. Palacios; A. Chakraborty; S. Rajan; C. Poblenz; S. Keller; S. P. DenBaars; J. S. Speck; U. K. Mishra20052005, vol.26, no.11
50-nm T-Gate Metamorphic GaAs HEMTs With f{sub}T of 440GHz and Noise Figure of 0.7dB at 26GHzK. Elgaid; H. McLelland; M. Holland; D. A. J. Moran; C. R. Stanley; I. G. Thayne20052005, vol.26, no.11
High-Performance 0.1-μm In{sub}0.4AlAs/In{sub}0.35GaAs MHEMTs With Ar Plasma TreatmentSung-Won Kim; Kang-Min Lee; Jae-Hak Lee; Kwang-Seok Seo20052005, vol.26, no.11
Improved Device Performance and Reliability in High κ HfTaTiO Gate Dielectric With TaN Gate ElectrodeN. Lu; H.-J. Li; M. Gardner; D.-L. Kwong20052005, vol.26, no.11
Integrated High-κ (κ ～ 19) MIM Capacitor With Cu/Low-κ Interconnects for RF ApplicationM. B. Yu; Yong Zhong Xiong; Sun-Jung Kim; S. Balakumar; Chunxiang Zhu; M.-F. Li; Byung-Jin Cho; G. Q. Lo; N. Balasubramanian; D.-L. Kwong20052005, vol.26, no.11
Dopant-Free FUSI Pt{sub}xSi Metal Gate for High Work Function and Reduced Fermi-Level PinningChang Seo Park; Byung Jin Cho20052005, vol.26, no.11
Parasitic Reset in the Programming Transient of PCMsD. Ielmini; D. Mantegazza; A. L. Lacaita; A. Pirovano; F. Pellizzer20052005, vol.26, no.11
200-mm Wafer-Scale Transfer of 0.18-μm Dual-Damascene Cu/SiO{sub}2 Interconnection System to Plastic SubstratesW. H. Teh; Guo Lihui; R. Kumar; D.-L. Kwong20052005, vol.26, no.11
New Substrate Passivation Method Dedicated to HR SOI Wafer Fabrication With Increased Substrate ResistivityD. Lederer; Jean-Pierre Raskin20052005, vol.26, no.11
Analysis of Active Matrix GaN-Based HFET Switch Circuits Integrated With GaN LED Micro-DisplaysGhien An Shih; Jian Jang Huang20052005, vol.26, no.11
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