期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998~2007



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2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
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2005, vol.26, no.9 2

题名作者出版年年卷期
Reduction of Leakage Current in Metal-Induced Lateral Crystallization Poly silicon TFTs With Dual-Gate and Multiple Nanowire ChannelsYung-Chun Wu; Ting-Chang Chang; Po-Tsun Liu; Cheng-Wei Chou; Yuan-Chun Wu; Chun-Hao Tu; Chun-Yen Chang20052005, vol.26, no.9 2