期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



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2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
High Transconductance of 2.25 S/mm Observed at 16 K for 195-nm-Gate In{sub}0.75Ga{sub}0.25As/In{sub}0.52Al{sub}0.48As HEMT Fabricated on (411)A-Oriented InP SubstrateI. Watanabe; K. Shinohara; T. Kitada; S. Shimomura; Y. Yamashita; A. Endoh; T. Mimura; T. Matsui; S. Hiyamizu20052005, vol.26, no.7
A Novel GaAs FET With Double Camel-Like Gate StructureJung-Hui Tsai20052005, vol.26, no.7
Q-Factor Characterization of RF GaN-Based Metal-Semiconductor-Metal Planar Interdigitated VaractorChun San Chu; Yugang Zhou; Kevin J. Chen; Kei May Lau20052005, vol.26, no.7
High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma TreatmentYong Cai; Yugang Zhou; Kevin J. Chen; Kei May Lau20052005, vol.26, no.7
Fabrication and Characterization of InGaP/GaAs Heterojunction Bipolar Transistors on GOI SubstratesShawn G. Thomas; Eric S. Johnson; Clarence Tracy; Papu Maniar; Xiuling Li; Bradley Roof; Quesnell Hartmann; David A. Ahmari20052005, vol.26, no.7
Dual High-K Gate Dielectric With Poly Gate Electrode: HfSiON on nMOS and Al{sub}2O{sub}3 Capping Layer on pMOSHong-Jyh Li; Mark I. Gardner20052005, vol.26, no.7
Characteristics and Mechanism of Tunable Work Function Gate Electrodes Using a Bilayer Metal Structure on SiO{sub}2 and HfO{sub}2Ching-Huang Lu; Gloria M. T. Wong; Michael D. Deal; Wilman Tsai; Prashant Majhi; Chi On Chui; Mark R. Visokay; James J. Chambers; Luigi Colombo; Brace M. Clemens; Yoshio Nishi20052005, vol.26, no.7
Effect of In-Line Electron Beam Treatment on the Electrical Performance of Cu/Organic Low-k Damascene InterconnectsZhe Chen; K. Prasad; Z. H. Gan; S. Y. Wu; S. S. Mehta; N. Jiang; S. G. Mhaisalkar; Rakesh Kumar; C. Y. Li20052005, vol.26, no.7
Microwave Characteristics of Liquid-Crystal Tunable CapacitorsJ. Andrew Yen; C. Alex Chang; Chih-Cheng Cheng; Jing-Yi Huang; Shawn S. H. Hsu20052005, vol.26, no.7
Aggressively Scaled UltraThin Undoped HfO{sub}2 Gate Dielectric (EOT < 0.7 nm) With TaN Gate Electrode Using Engineered Interface LayerChanghwan Choi; Chang-Yong Kang; Se Jong Rhee; Mohammad Shahariar Akbar; Siddarth A. Krishnan; Manhong Zhang; Hyoung-Sub Kim; Tackhwi Lee; Injo Ok; Feng Zhu; Jack C. Lee20052005, vol.26, no.7
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