期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
Low-Frequency 1/f Noise and Persistent Transients in AlGaN-GaN HFETsO. Katz; G. Bahir; J. Salzman20052005, vol.26, no.6
Gate-Recessed AlGaN-GaN HEMTs for High-Performance Millimeter-Wave ApplicationsJ. S. Moon; Shihchang Wu; D. Wong; I. Milosavljevic; A. Conway; P. Hashimoto; M. Hu; M. Antcliffe; M. Micovic20052005, vol.26, no.6
Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO{sub}3 Memory FilmChih-Yi Liu; Pei-Hsun Wu; Arthur Wang; Wen-Yueh Jang; Jien-Chen Young; Kuang-Yi Chiu; Tseung-Yuen Tseng20052005, vol.26, no.6
Characterization of Erbium-Silicided Schottky Diode JunctionMoongyu Jang; Yarkyeon Kim; Jaeheon Shin; Seongjae Lee20052005, vol.26, no.6
Characterization of Silver CPWs for Applications in Silicon MMICsV. V. Levenets; R. E. Amaya; N. G. Tarr; T. J. Smy; J. W. M. Rogers20052005, vol.26, no.6
A Spintronics Full Adder For Magnetic CPUHao Meng; Jianguo Wang; Jian-Ping Wang20052005, vol.26, no.6
Mechanisms and Solutions to Gate Oxide Degradation in Flash Memory by Tunnel-Oxide Nitridation EngineeringSzu-Yu Wang; Chili-Yuan Chin; Pei-Ren Jeng; Ling-Wu Yang; Ming-Shiang Chen; Chi-Tung Huang; Jeng Gong; Kuang-Chao Chen; Joseph Ku; Chih-Yuan Lu20052005, vol.26, no.6
Effects of Boron Diffusion in pMOSFETs With TiN-HfSiO Gate StackSeung-Chul Song; Zhibo Zhang; Byoung Hun Lee20052005, vol.26, no.6
Temperature-Compensated Film Bulk Acoustic Resonator Above 2 GHzWei Pang; Hongyu Yu; Hao Zhang; Eun Sok Kim20052005, vol.26, no.6
A Novel Process-Compatible Fluorination Technique With Electrical Characteristic Improvements of Poly-Si TFTsShen-De Wang; Wei-Hsiang Lo; Tzu-Yun Chang; Tan-Fu Lei20052005, vol.26, no.6
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